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IMAGE SENSOR SOLUTIONS

TABLE OF CONTENTS

DEVICE DESCRIPTION........................................4

ARCHITECTURE...................................................4

IMAGE ACQUISITION...........................................5

CHARGE TRANSPORT ........................................5

OUTPUT STRUCTURE.........................................5

DARK REFERENCE PIXELS................................5

DUMMY PIXELS....................................................5

SCAVENGING COLUMNS....................................5

PHYSICAL DESCRIPTION ...................................6

ESCRIPTION

................................................6

PERFORMANCE...................................................7

LECTRO

PTICAL

PECIFICATIONS

.....................7

PECTRAL

ESPONSE

.........................................8

Cosmetic Definitions .....................................9

OPERATION........................................................10

BSOLUTE

AXIMUM

ATINGS

...........................10

DC O

PERATING

ONDITIONS

.............................11

AC O

PERATING

ONDITION

...............................12

AC T

IMING

ONDITIONS

....................................12

IMING DIAGRAMS

..............................................13

QUALITY ASSURANCE AND RELIABILITY.......14

ORDERING INFORMATION ...............................15

VAILABLE

ART

ONFIGURATIONS

....................15

REVISION CHANGES.........................................15

PHYSICAL DESCRIPTION .................................16

ACKAGE

RAWING

...........................................16

TABLE OF FIGURES

Figure 1 Functional block diagram .................... 4

Figure 3 Output schematic ................................ 5

Figure 4 Package pin designation ..................... 6

Figure 5 Spectral response ............................... 8

Figure 6 Typical output structure..................... 11

Figure 7 Timing diagrams................................ 13

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IMAGE SENSOR SOLUTIONS

S U M M A R Y S P E C I F I C A T I O N

KODAK KAF-1402E/ME Image

Sensor 1320 (H) x 1035 (V)

Enhanced Response Full-Frame

CCD

Description

The KAF-1402E/ME is a high performance
monochrome area CCD (charge-coupled device)
image sensor with 1320H x 1035V photoactive
pixels. It is designed for a wide range of image
sensing applications in the 350 nm to 1000 nm
wavelength band. Typical applications include
military, scientific, and industrial imaging. Low dark
current and good charge capacity result in 69dB
dynamic range at room temperature.

The sensor is built with a true two-phase CCD
technology employing a transparent gate. This
technology simplifies the support circuits that drive
the sensor, reduces the dark current without
compromising charge capacity, and significantly
increases to optical response compared to
traditional front illuminated full frame sensors.

The ME configuration adds micro lenses to the
surface of the CCD sensor. These lenses focus the
majority of the light through the transparent gate,
increasing the optical response further.

The photoactive area is 8.98mm x 7.04 mm and is
housed in a 68-pin, pin grid array ceramic package
with 0.1" pin spacing.

Parameter Value

Architecture

Full-Frame CCD

Enhanced Response

Total Number of Pixels

1348 (H) x 1037 (V)

Number of Active Pixels

1320 (H) x 1035 (V) =

approx. 1.4M

Pixel Size

6.8

�m (H) x 6.8�m (V)

Imager Size

8.98 x 7.04

Chip Size

16.67mm (H) x

16.05mm (V)

Aspect Ratio

4:3

Saturation Signal

45,000

Peak Quantum
Efficiency

without Microlens 62%

with Microlens 82%

Output Sensitivity

�V/e

Read Noise

15 electrons

Dark Current

6pA/cm

@ 25

�C

or 15 electrons/pixel/sec

Dark Current Doubling
Temperature

6.3

�C

Dynamic Range

69 dB

Charge Transfer
Efficiency

>0.99999

Blooming Suppression

None

Maximum Data Rate

10 MHz

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IMAGE SENSOR SOLUTIONS

DEVICE DESCRIPTION
Architecture

Figure 1 Functional block diagram

The sensor consists of 1320 parallel (vertical)
CCD shift registers each 1035 elements long.
These registers act as both the photosensitive
elements and as the transport circuits that allow
the image to be sequentially read out of the
sensor. The parallel (vertical) CCD registers
transfer the image one line at a time into a single
1348 element (horizontal) CCD shift register. The
horizontal register transfers the

charge to a single output amplifier. The output
amplifier is a two-stage source follower that
converts the photo-generated charge to a voltage
for each pixel.

The micro lenses are formed along each row.
They are effectively half of a cylinder centered on
the transparent gates, extending continuously in
the row direction.

KAF - 1402E/ME

Usable Active Image

1320(H) x 1035(V)

6.8 x 6.8

�m pixels

4:3 aspect ratio

1320 Active Pixels/Line

20 Dark

6 Invalid

Vrd

Vdd
Vout
Vss

Sub
Vog

2 Inactive

1 Dark line

Vlg

= scavanging

CCDs to reduce

edge artifacts

V1 electrode V2 electrode

Micro lens

Silicon

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IMAGE SENSOR SOLUTIONS

Image Acquisition

An electronic representation of an image is formed
when incident photons falling on the sensor plane
create electron-hole pairs within the sensor. These
photon-induced electrons are collected locally by
the formation of potential wells at each photogate
or pixel site. The number of electrons collected is
linearly dependent on light level and exposure
time and non-linearly dependent on wavelength.
When the pixel's capacity is reached, excess
electrons will leak into the adjacent pixels within
the same column. This is termed blooming. During
the integration period, the V1 and V2 register
clocks are held at a constant (low) level.
See Figure 7 Timing diagrams.

Charge Transport

Referring again to Figure 7 Timing diagrams, the
integrated charge from each photogate is
transported to the output using a two-step
process. Each line (row) of charge is first
transported from the vertical CCD's to the
horizontal CCD register using the V1 and V2
register clocks. The horizontal CCD is presented a
new line on the falling edge of V2 while H1 is
held high. The horizontal CCD's then transport
each line, pixel by pixel, to the output structure by
alternately clocking the H1 and H2 pins in a
complementary fashion. On each falling edge of

H2 a new charge packet is transferred onto a
floating diffusion and sensed by the output
amplifier.

Output Structure

Charge presented to the floating diffusion (FD) is
converted into a voltage and current amplified in
order to drive off-chip loads. The resulting voltage
change seen at the output is linearly related to the
amount of charge placed on FD. Once the signal
has been sampled by the system electronics, the
reset gate (R) is clocked to remove the signal
and FD is reset to the potential applied by Vrd.
(see Figure 3 Output schematic). More signal at
the floating diffusion reduces the voltage seen at
the output pin. In order to activate the output
structure, an off-chip load must be added to the
Vout pin of the device such as shown in Figure 6
Typical output structure..

Dark Reference Pixels

At the beginning of each line are 20 light shielded
pixels. There is also 1 full dark line at the start of
every frame and 1 full dark line at the end of each

frame. Under normal circumstances, these pixels
do not respond to light. However, dark reference
pixels in close proximity to an active pixel,
(including the 2 full dark lines and one column at
end of each line), can scavenge signal depending
on light intensity and wavelength and therefore will
not represent the true dark signal.

Dummy Pixels

Within the horizontal shift register are 6 leading
pixels that are not associated with a column of
pixels from the vertical register. These pixels
contain only horizontal shift register dark current
signal and do not respond to light. A few of these
leading dummy pixels may scavenge false signal
depending on operating conditions. There are two
more dummy pixels at the end of each line.

Scavenging Columns

There are several columns of vertical CCD
adjacent to the photo active vertical CCD that act
to scavenge unwanted stray signal away from the
imaging area in order to reduce artifacts at the
edge if the image area. These columns are not
connected to the horizontal register so their
presence does not have to be taken into account
when clocking out each line. They transfer their
charge in a direction opposite of the photo-active
columns and the charge is removed through a
connection to Vdd.

Figure 3 Output schematic

Floating
Diffusion

HCCD
Charge
Transfer

Source
Follower
#1

Source
Follower
#2

Vrd

Vog

VDD

Vout

Vlg

Электронный компонент: KAF-1401E