- 1-
C L - 1 C L 3
Infrared Emitting Diodes(GaAlAs)
K O D E N S H I
The CL-1CL3 is a high-power GaAlAs IRED mounted
in a 3 ceramic package. The output power is so high
compared to GaAs IREDs.
F E A T U R E S
Compact (3 m m )
Wide beam angle
L o w - c o s t
A P P L I C A T I O N S
Floppy disk drives
Optical switches
Optical readers
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
4
6 0
0 . 5
9 0
- 2 0 ~ + 7 0
- 3 0 ~ + 8 0
2 4 0
V
m A
A
m W
U n i t
( T a = 2 5)
*1. pulse width tw =100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 4 0 m A
V
R
= 4 V
f = 1 M H z
I
F
= 4 0 m A
I
F
= 4 0 m A
I
F
= 4 0 m A
I t e m
T y p .
2 0
3 . 6
8 8 0
5 0
5 3
V
F
I
R
C t
P
O
p
1 . 5
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
- 2-
C L - 1 C L 3
Infrared Emitting Diodes(GaAlAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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