- 1-
E L - 1 K 3
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
The EL-1K3 is a high-power GaAs IRED mounted in
durable, hermetically sealed TO-18 metal can
package, which provides years of reliable performance
even under demanding conditions such as use
o u t d o o r s .
F E A T U R E S
Wide beam angle
D u r a b l e
High reliability in demanding environments
A P P L I C A T I O N S
Optical emitters
Optical switches
Smoke sensors
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
1 0 0
1
2 0 0
- 3 0 ~ + 1 0 0
- 5 5 ~ + 1 2 5
2 6 0
V
m A
A
m W
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 1 0 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I t e m
T y p .
1 . 3 5
2 5
4 . 0
9 4 0
5 0
3 6
V
F
I
R
C t
P
O
p
2 . 2
1 . 7
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
- 2-
E L - 1 K 3
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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