- 1-
E L - 1 K L 3E L - 1 K L 5
Infrared Emitting Diodes(GaAs)
K O D E N S H I
The EL-1KL3 and 1KL5 are high-power GaAs
IREDs mounted in durable, hermetically sealed
TO-18 metal can package, which provides years
of reliable performance even under demanding
conditions such as use outdoors.
F E A T U R E S
Narrow beam angle
D u r a b l e
High reliability in demanding environments
A P P L I C A T I O N S
Optical emitters
Optical switches
E n c o d e r s
Smoke sensors
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
C
T o p r .
T s t g .
T s o l .
5
1 0 0
1
1 7 0
- 4 0 ~ + 1 0 0
- 5 5 ~ + 1 2 5
2 6 0
V
m A
A
m W
U n i t
( T a = 2 5)
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
1 . 7
1 0
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 1 0 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I
F
= 1 0 0 m A
I t e m
T y p .
T y p .
V
F
I
R
C t
P
O
p
1 . 3 5
2 5
1 5
9 4 0
5 0
8
1 . 3 5
2 5
1 0
9 4 0
5 0
5
1 . 7
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
E L - 1 K L 3
E L - 1 K L 5
M i n .
M a x .
M a x .
U n i t .
EL-1KL5
EL-1KL3
- 2-
E L - 1 K L 3E L - 1 K L 5
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current Vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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