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Электронный компонент: EL-1ML2

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- 1-
E L - 1 M L 2
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
The EL-1ML2, a high-power GaAs IRED mounted in
a TO-18 type header with clear epoxy encapsulation,
has wide beam angle and is relatively low-cost
compared to TO-18 can-type devices.
F E A T U R E S
Wide beam angle
Relative low cost against metal can package
Low profile package
A P P L I C A T I O N S
Optical switches
E n c o d e r s
Optical readers
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
1 0 0
1
1 7 0
- 2 5 ~ + 1 0 0
- 2 5 ~ + 1 0 0
2 6 0
V
m A
A
m W


U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 5 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 5 0 m A
I
F
= 5 0 m A
I
F
= 5 0 m A
I t e m
T y p .
1 . 2
2 5
2 . 7
9 4 0
5 0
3 2
V
F
I
R
C t
P
O
p

1 . 5
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
- 2-
E L - 1 M L 2
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance