- 1-
E L - 3 1 4
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
C a p a c i t a n c e
Radiant intensity
Peak emission wavelength
Spectral bandwidth 50%
Half angle
The EL-314 a high-power GaAs IRED mounted in a
clear sidelooking package, is compact, low profile, and
easy to mount.
F E A T U R E S
C o m p a c t
Low profile package
L o w - c o s t
Sidelooking plastic package
A P P L I C A T I O N S
P h o t o i n t e r r u p t e r s
Optical switches
T o y s
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Pulse forward current
* 1
Power dissipation
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
I
F P
P
D
T o p r .
T s t g .
T s o l .
5
5 0
0 . 5
7 5
- 2 5 ~ + 8 5
- 3 0 ~ + 1 0 0
2 4 0
V
m A
A
m W
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 5 0 m A
V
R
= 5 V
f = 1 M H z
I
F
= 5 0 m A
I
F
= 5 0 m A
I
F
= 5 0 m A
I t e m
T y p .
2 5
0 . 7
9 4 0
5 0
3 0
V
F
I
R
C t
P
O
p
1 . 6
1 0
V
A
p F
m W / s r
n m
n m
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
- 2-
E L - 3 1 4
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
PDF 
ZIP