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E L - 3 1 6
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth
Radiant intensity
Half angle
The EL-316 is a high-power GaAs IRED mounted in a
clear epoxy package.
F E A T U R E S
3 casting mold type
High output power
A P P L I C A T I O N S
V T R
Optical remote controllers
Transmission sensors
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Power dissipation
Pulse forward current
* 1
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
P
D
I
F P
T o p r .
T s t g .
T s o l .
4
6 0
8 0
0 . 5
2 58 0
4 08 5
2 4 0
V
m A
m W
A
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 4 0 m A
V
R
= 4 V
I
F
= 4 0 m A
I
F
= 4 0 m A
I
F
=40mA
I t e m
T y p .
1 . 2
9 4 0
5 0
2 0
1 7
V
F
I
R
p
P O
1 0
1 . 5
1 0
V
A
n m
n m
m W / s r
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
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E L - 3 1 6
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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