- 1-
E L - 3 2 5
Infrared Emitting Diodes(GaAs)
K O D E N S H I
Forward voltage
Reverse current
Peak emission wavelength
Spectral bandwidth
Radiant intensity
* 3
Half angle
The EL325 is a GaAs IRED mounted in a low profile
clear epoxy package.This IRED is both compact and
easy to mount.
F E A T U R E S
Ultra compact
Low profile
S n a p in mount is possible
A P P L I C A T I O N S
P h o t o i n t e r r u p t e r s
Optical equipment
D I M E N S I O N S
(Unit : mm)
R a t i n g
S y m b o l
I t e m
MAXIMUM RATINGS
Reverse voltage
Forward current
Power dissipation
Pulse forward current
* 1
Operating temp.
Storage temp.
Soldering temp.
* 2
V
R
I
F
P
D
I
F P
T o p r .
T s t g .
T s o l .
5
5 0
1 0 0
0 . 5
2 58 5
3 08 5
2 6 0
V
m A
m W
A
U n i t
( T a = 2 5)
( T a = 2 5)
ELECTRO-OPTICAL CHARACTERISTICS
I
F
= 5 0 m A
V
R
= 5 V
I
F
= 5 0 m A
I
F
= 5 0 m A
I
F
= 5 0 m A
I t e m
T y p .
9 4 0
5 0
0 . 7
5 0
V
F
I
R
p
P
O
1 . 6
1 0
V
A
n m
n m
m W / s r
d e g .
S y m b o l
C o n d i t i o n s
M i n .
M a x .
U n i t .
*1. pulse width tw 100
sec.period T = 1 0 m s e c .
*2. For MAX.5 seconds at the position of 2 mm from the package
*3. Measured by tester of KODENSHI CORP.
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E L - 3 2 5
Infrared Emitting Diodes(GaAs)
Power dissipation Vs.
Ambient temperature
Radiant intensity Vs.
Forward current
Relative radiant intensity Vs.
Ambient temperature
Relative intensity Vs.
Wavelength
Forward current vs.
Forward voltage
Radiant Pattern
Relative radiant intensity Vs.
Distance
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