Photocoupler
FEATURES
TTL Compatible Output
Collector-Emitter Voltage : Min.50V
Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)
Electrical Isolation Voltage : AC5000Vrms
UL Recognized File No. E107486
K4N25G - No Base Connection,
K4N25H - With Base Connection
APPLICATIONS
Interface between two circuits of different potential
Vending Machine, Copiers
Measuring Instrument
Home Appliances
MAXIMUM RATINGS
(Ta=25
)
**
Except for K4N25G
*1. Input current with 100
pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
K4N25G K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Phototransistor in a 6-pin package.
Emitter-Base Breakdown Voltage**
Lead Soldering Temperature
*3
T
sol
260
Operating Temperature T
opr
-30~+100
BV
EBO
6
Storage Temperature T
stg
-55~+125
Input to Output Isolation Voltage
*2
V
iso
AC5000
V
rms
Collector Power Dissipation
P
C
150
mW
V
V
V
Collector Current
I
C
50
mA
V
Output
Collector-Emitter Breakdown Voltage
BV
CEO
50
Emitter-Collector Breakdown Voltage
BV
ECO
6
Collector-Base Breakdown Voltage**
BV
CBO
80
mA
V
A
Power Dissipation
P
D
70
mW
Reverse Voltage
VR
5
Peak Forward Current
*1
I
FP
1
Parameter
Symbol
Rating
Unit
Input
Forward Current
I
F
50
Total Power Dissipation
P
tot
200
mW
DIMENSION
(Unit : mm)
1/3
6
.
4
0
.
2
5
8.9 0.25
2.54 0.25
1
2
3
1.2
0.5
3
.
8
0
.
2
5
2
.
7
M
i
n
.
0
.
5
1
M
i
n
.
7.62 0.25
6.4
0.25
0 -15
6
5
4
Orientation Mark
3
6
5
4
4
5
6
1
2
1
2
3
PIN NO. AND INIERNAL
CONNECION DIAGRAM
K4N25G
K4N25H
Photocoupler
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25
, unless otherwise noted)
I
F
=10mA
VR=5V
V=0, f=1MHz
I
C
=0.5mA
I
E
=0.1mA
I
C
=0.1mA
I
E
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=5mA, I
C
=1mA
V=0, f=1MHz
V
CC
=10V, R
L
=100
I
C
=2mA
** Except for K4N25G
*4. CTR=(I
C
/I
F
) X 100 (%)
V
BV
EBO
6
-
-
CTR
I
F
=5mA, V
CE
=5V
RH=40~60%, V=500V
BV
CEO
V
CE(SAT)
BV
ECO
BV
CBO
Coupled
Rise Time
Fall Time
Condition
tf
C
T
-
30
50
3
10
11
-
-
10
-
Typ.
1.15
V
K4N25G K4N25H
Parameter
Min.
-
Unit.
pF
-
-
0.4
-
-
3
-
Max.
1.30
-
-
Symbol
V
F
-
tr
-
R
IO
-
1
-
50
600
-
-
-
pF
%
V
pF
V
V
V
80
-
-
-
6
Input
Output
Forward Voltage
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Emitter-Base Breakdown Voltage **
C
CE
C
IO
Collector-Base Breakdown Voltage **
Input-Output Isolation Resistance
Input-Output Capacitance
Capacitance
Current Transfer Ratio
*4
Collector-Emitter Saturation Voltage
I
R
-
-
10
mA
Collector Dark Current
I
CEO
-
-
100
nA
Reverse Current
2/3
Photocoupler
K4N25G K4N25H
3/3
Ambient Temperature T
a
(
)
Forward Current vs.
Ambient Temperature
0
-20 0 20
F
o
r
w
a
r
d
C
u
r
r
e
n
t
I
F
(
m
A
)
10
20
40
30
50
40 60 100
0.1
0.1
Load Resistance R
L
(
)
1 10
Response Time vs.
Load Resistance
R
e
s
p
o
n
s
e
T
i
m
e
t
r
,
t
f
(
s
)
10
100
80
D
a
r
k
C
u
r
r
e
n
t
I
C
E
O
(
)
Ambient Temperature T
a
(
)
0
0.001
0.01
40
20
0.1
1
80
60 100
Dark Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
C
o
l
l
e
c
t
o
r
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
P
C
(
m
W
)
-20
0
50
100
150
200
250
Ambient Temperature T
a
(
)
20
0 60
40 100
80
Output
Input
Test Circuit
V
IN
R
R
L
V
O
V
CC
Waveform
10%
90%
Switching Time Test Circuit
tr
tf
1
500
V
CE
=24V
V
CE
=10V
tr
tf
V
CE
=5V
I
C
=2mA
T
a
=25
Forward Voltage V
F
(V)
20
0
0.4
100
120
140
60
40
80
F
o
r
w
a
r
d
C
u
r
r
e
n
t
I
F
(
m
A
)
1.2
0.8 1.6
T
a
=70
T
a
=25
T
a
=-55
Forward Current vs.
Forward Voltage
2.0
I
F
=20mA
Collector Current vs.
Ambient Temperature
I
F
=1mA
Ambient Temperature T
a
(
)
-20
0
0 40
20 60
100
10
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
I
C
(
m
A
)
1
I
F
=5mA
I
F
=10mA
80
Ta=25
V
CC
=10V
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
I
C
(
m
A
)
Forward Current I
F
(mA)
0.1
0.001
1
0.01
0.1
1
10
10 100
Collector Current vs.
Forward Current
100
T
a
=25
Collector Current vs.
Collector-Emitter Voltage
10
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
I
C
(
m
A
)
0
30
20
40
Collector-Emitter voltage V
CE
(V)
2
4
6
10
I
F
=1mA
8
I
F
=20mA
I
F
=30mA
I
F
=10mA
I
F
=5mA
P
C
(MAX.)
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