DIMENSIONSUnit : mm
MAXIMUM RATINGS
ELECTRO-OPTICAL
CHARACTERISTICS
PHOTOTRANSISTORS
ST-1MLBR2
ST-1MLBR2
The ST-1MLBR2 are high-sensitivity NPN silicon photo-
transistors mounted on TO-18 type metal stems with epoxy
encapsulation and with visible light cut-off filters, so that the
phototransistors are sensitive only to infrared rays.
ST-MLBR2Three leads (Collector, Emitter, Base)ST-1MLBR2
FEATURES
TO-18
TO-18 visible ray cut off resin potting type
With the base tarminal
Wide angular response
APPLICATIONS
Optical switches
Industrial machines
Collector
Emitter
1
1
5.40.2
45
20.01
0.45
4.20.2
0.2
EpoxyResin
MAX
2
20.2
2.540.2
Base
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit.
Switching speeds
Collecor dark current
Light current
C-E saturation voltage
Rise time
Fall time
Spectral sensitivity
Peak wavelength
Half angle
I
CEO
I
L
V
CE(sat)
tr
tf
p
V
CEO
=10V
V
CE
=10V,E
V
=200Lx
*2
I
C
=2mA,E
V
=2000Lx
*2
V
CC
=10V
I
C
=5mA
R
L
=100
0.5
1
1.2
0.2
8
10
7201050
940
70
200
5.0
0.4
nA
mA
V
sec.
sec.
nm
nm
deg.
Item
Symbol
Rating
Unit
C-E voltage
E-C voltage
Collector current
Collector power
dissipation
Operating temp.
Storage temp.
Soldering temp.
*1
V
CEO
V
ECO
I
C
P
C
Topr.
Tstg.
Tsol.
40
4
30
100
-2590
-30100
260
V
V
mA
mW
Ta25
Ta25
1. 2mm5
For MAX. 5 seconds at the position of 2 mm from the resin edge
2. 2856K
Color temp. = 2856K standard Tungsten lamp
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