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Электронный компонент: 2N4416

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FEATURES
Direct Replacement For SILICONIX 2N/SST4416 & 2N4416A
VERY LOW NOISE FIGURE (400 MHz)
4 dB (max)
EXCEPTIONAL GAIN (400 MHz)
10 dB (min)
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +200 C
Operating Junction Temperature
-55 to +135 C
Maximum Power Dissipation
Continuous Power Dissipation
300mW
Maximum Currents
Gate Current
10mA
Maximum Voltages
Gate to Drain or Gate to Source LS4416
-30V
Gate to Drain or Gate to Source LS4416A
-35V
ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
2N/SST4416 -30
BV
GSS
Gate to Source
Breakdown Voltage
2N4416A -35
I
G
= -1A, V
DS
= 0V
2N/SST4416 -6
V
GS(off)
Gate to Source
Cutoff Voltage
2N4416A -2.5 -6
V
V
DS
= 15V, I
D
= 1nA
I
DSS
Gate to Source Saturation Current
5
15
mA
V
DS
= 15V, V
GS
= 0V
2N
-0.1
V
GS
= -20V, V
DS
= 0V
I
GSS
Gate
Leakage
Current
SST
-1.0
nA
V
GS
= -15V, V
DS
= 0V
g
fs
Forward
Transconductance
4500
7500
g
os
Output
Conductance
50
S V
DS
= 15V, V
GS
= 0V, f = 1kHz
C
iss
Input
Capacitance
2
0.8
C
rss
Reverse Transfer Capacitance
2
4
C
oss
Output
Capacitance
2
2
pF V
DS
= 15V, V
GS
= 0V, f = 1MHz
e
n
Equivalent Input Noise Voltage
6
nV/Hz
V
DS
= 10V, V
GS
= 0V, f = 1kHz
*Optional Package For 2N4416
2N SERIES*
TO-92
BOTTOM VIEW
1
2
3
S D G
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
2N SERIES
D
S
G
2
1
3
BOTTOM VIEW
TO-72
4
C
Linear Integrated Systems
2N/SST4416 2N4416A
N-CHANNEL JFET
HIGH FREQUENCY AMPLIFIER



































Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261


Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261












HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated)
100 MHz
400 MHz
SYMBOL
CHARACTERISTIC
MIN MAX
MIN MAX
UNITS
CONDITIONS
g
iss
Input
Conductance
100
1000
b
iss
Input
Susceptance
2
2500
10000
g
oss
Output
Conductance
75 100
b
oss
Output
Susceptance
2
1000
4000
G
fs
Forward
Transconductance
4000
S V
DS
= 15V, V
GS
= 0V
G
ps
Power
Gain
2
18 10
V
DS
= 15V, I
D
= 5mA
NF Noise
Figure
2
2 4
dB
V
DS
= 15V, I
D
= 5mA, R
G
= 1k
1
2
3
SOT-23
DIMENSIONS IN
MILLIMETERS
0.89
1.03
1.78
2.05
1.20
1.40
2.10
2.64
0.37
0.51
2.80
3.04
0.89
1.12
0.013
0.100
0.085
0.180
0.55
1
2
3
LS XXX
YYWW
0.170
0.195
0.500
0.610
0.016
0.022
0.095
0.105
0.045
0.055
0.175
0.195
0.130
0.155
0.045
0.060
0.014
0.020
TO-92
DIMENSIONS
IN INCHES.
TO-72
Four Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
4 LEADS
2
1
3
0.046
0.036
45
0.048
0.028
0.100
0.050
4
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
Not production tested, guaranteed by design.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implicatio
otherwise under any patent or patent rights of Linear Integrated Systems.
n or