FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191
LOW GATE LEAKAGE CURRENT
I
GSS
10pA
LOW TRANSFER CAPACITANCE
C
rss
1.0pF
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
-55 to +135 C
Maximum Power Dissipation
Continuous Power Dissipation One Side
300mW
Continuous Power Dissipation Both Sides
525mW
Maximum Current
Drain to Source
2
50mA
Maximum Voltages
Drain to Gate
2
30V
Drain to Source
2
30V
Transient Gate to Source
2,3
125V
Gate to Gate
80V
MATCHING CHARACTERISTICS @ 25 C (unless otherwise stated) (V
BS
= 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
fs2
fs1
g
g
Forward Transconductance Ratio
0.85
1.0
V
DS
= -15V, I
D
= -500A, f = 1kHz
V
GS1-2
Gate to Source Threshold Voltage
Differential
100
mV
V
DS
= -15V, I
D
= -500A
T
V
2
GS1
-
Gate to Source Threshold Voltage
Differential with Temperature
4
100
V
DS
= -15V, I
D
= -500A
T
S
= -55 TO +25 C
T
V
2
GS1
-
Gate to Source Threshold Voltage
Differential with Temperature
4
100
C
V
V
DS
= -15V, I
D
= -500A
T
S
= +25 TO +125 C
G1
D1
G2
D2
5
BOTTOM VIEW
TO-78
1
2
3
4
6
7
S1
C
S2
Linear Integrated Systems
3N190 3N191
P-CHANNEL DUAL MOSFET
ENHANCEMENT MODE
ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
-40
I
D
= -10A
BV
SDS
Source to Drain Breakdown Voltage
-40
I
S
= -10A, V
BD
= 0V
V
GS
Gate to Source Voltage
-3.0
-6.5
V
DS
= -15V, I
D
= -500A
-2.0 -5.0
V
DS
= V
GS
, I
D
= -10A
V
GS(th)
Gate to Source Threshold Voltage
-2.0 -5.0
V
V
DS
= -15V, I
D
= -500A
I
GSSR
Reverse Gate Leakage Current
10
V
GS
= 40V
I
GSSF
Forward Gate Leakage Current
-10
V
GS
= -40V
I
DSS
Drain Leakage Current "Off"
-200
V
DS
= -15V
I
SDS
Source to Drain Leakage Current "Off"
-400
pA
V
SD
= -15V, V
DB
= 0V
I
D(on)
Drain Current "On"
-5.0
-30.0
mA
V
DS
= -15V, V
GS
= -10V
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
ELECTRICAL CHARACTERISTICS CONT. @ 25 C (unless otherwise stated) (V
SB
= 0V unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
g
fs
Forward
Transconductance
5
1500
4000
Y
os
Output
Admittance
300
S V
DS
= -15V, I
D
= -5mA, f = 1kHz
r
ds(on)
Drain to Source "On" Resistance
300
V
DS
= -20V, I
D
= -100A
C
rss
Reverse Transfer Capacitance
1.0
C
iss
Input Capacitance Output Shorted
4.5
C
oss
Output Capacitance Input Shorted
3.0
pF V
DS
= -15V, I
D
= -5mA, f = 1MHz
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
t
d(on)
Turn On Delay Time
15
t
r
Turn On Rise Time
30
t
off
Turn
Off
Time
50
ns
V
DD
= -15V, I
D(on)
= -5mA,
R
G
= R
L
= 1.4k
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Per
transistor.
3.
Approximately doubles for every 10 C increase in T
A
.
4.
Pulse: t = 300s, Duty Cycle 3%
5.
Measured at end points, T
A
and T
B
.
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