DCR1473SY
1/8
www.dynexsemi.com
DCR1473SY
Phase Control Thyristor
Replaces August 2000 version, DS4652-4.1
DS4652-5.1 November 2002
PACKAGE OUTLINE
KEY PARAMETERS
V
DRM
1200V
I
T(AV)
4135A
I
TSM
64000A
dVdt*
1000V/
s
dI/dt
500A/
s
*Higher dV/dt selections available
Outline type code: Y
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
If a lower voltage grade is required, then use V
DRM
/100 for the
grade required e.g.:
DCR1473SY08 for an 800V variant etc.
Note: Please use the complete part number when ordering and quote
this number in any future correspondance relating to your order.
VOLTAGE RATINGS
DCR1473SY12
Conditions
T
vj
= 0 to 125C.
I
DRM
= I
RRM
= 250mA.
V
DRM
, V
RRM
= 10ms 1/2 sine.
V
DSM
& V
RSM
= V
DRM
& V
RRM
+ 100V
respectively.
Lower voltage grades available.
Part Number
Repetitive Peak Voltages
V
DRM
V
RRM
V
1200
DCR1473SY
2/8
www.dynexsemi.com
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
3190
A
-
5010
A
-
3950
A
Half wave resistive load
1966
A
-
3090
A
-
2410
A
Symbol
Parameter
Conditions
Double Side Cooled
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
Mean on-state current
I
T(RMS)
RMS value
I
T
Continuous (direct) on-state current
Units
Max.
Half wave resistive load
4135
A
-
6495
A
-
5700
A
Half wave resistive load
2605
A
-
4090
A
-
3290
A
CURRENT RATING
T
case
= 80C unless stated otherwise.
CURRENT RATING
T
case
= 60C unless stated otherwise.
DCR1473SY
3/8
www.dynexsemi.com
SURGE RATINGS
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
Units
Symbol
Parameter
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
20.48 x 10
6
A
2
s
64.0
kA
13.1x 10
6
A
2
s
51.0
kA
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.019
Anode dc
Clamping force 43.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.002
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
38.0
47.0
kN
-55
125
o
C
-
On-state (conducting)
-
135
o
C
-
0.004
o
C/W
o
C/W
Cathode dc
-
-
o
C/W
Double side cooled
-
0.0095
o
C/W
DCR1473SY
4/8
www.dynexsemi.com
DYNAMIC CHARACTERISTICS
Parameter
Symbol
Conditions
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
From 67% V
DRM
to 1000A
Gate source 20V, 10
t
r
= 0.5
s to 1A, T
j
= 125
o
C
dV/dt
Maximum linear rate of rise of off-state voltage
To 67% V
DRM
T
j
= 125
o
C, gate open circuit
Max.
Units
250
mA
1000
V/
s
Repetitive 50Hz
250
A/
s
Non-repetitive
500
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
t
gd
Delay time
0.824
V
0.066
m
2.0
s
V
D
= 67% V
DRM
, Gate source 30V, 15
t
r
= 0.5
s, T
j
= 25
o
C
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DRM
= 5V, T
case
= 25
o
C
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DRM
= 5V, T
case
= 25
o
C
I
GT
Gate trigger current
V
GD
Gate non-trigger voltage
At V
DRM
T
case
= 125
o
C
V
FGM
Peak forward gate voltage
Anode positive with respect to cathode
V
FGN
Peak forward gate voltage
Anode negative with respect to cathode
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
Anode positive with respect to cathode
P
G(PK)
Peak gate power
See Gate Characteristics curve/table
P
G(AV)
Mean gate power
4.0
V
400
mA
0.25
V
30
V
0.25
V
5
V
30
A
150
W
10
W
Max.
Units
DCR1473SY
5/8
www.dynexsemi.com
0
1000
2000
3000
4000
0
1000
2000
3000
4000
Mean on-state current, I
T(AV)
- (A)
Mean power dissipation - (W)
dc
1/2 wave
3 phase
6 phase
CURVES
Fig. 2 Maximum (limit) on-state characteristics
Fig. 3 Power dissipation curves
Fig. 4 Gate characteristics
0.5
1.0
1.5
Instantaneous on-state voltage V
T
- (V)
0
2000
4000
6000
8000
10000
Instantaneous on-state current I
T
- (A)
Measured under pulse conditions
T
j
= 25C
T
j
= 125C
10
1
0.1
0.01
0.001
Gate trigger current I
GT
- (A)
100
10
1
0.1
Gate trigger voltage V
GT
- (V)
100W
50W
20W
10W
5W
2W
T
j
= 125C
T
j
= -40C
T
j
= 25C
Upper limit 99%
V
FGM
I
FGM
Lowe
r limit 1
%
Pulse width
s
100
200
500
1ms
10ms
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Pulse frequency Hz
Table gives pulse power P
G(PK)
in Watts
PDF 
ZIP