DG758BX45
1/19
APPLICATIONS
s
Variable speed A.C. motor drive inverters (VSD-AC).
s
Uninterruptable Power Supplies
s
High Voltage Converters.
s
Choppers.
s
Welding.
s
Induction Heating.
s
DC/DC Converters.
FEATURES
s
Double Side Cooling.
s
High Reliability In Service.
s
High Voltage Capability.
s
Fault Protection Without Fuses.
s
High Surge Current Capability.
s
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements.
KEY PARAMETERS
I
TCM
3000A
V
DRM
4500V
I
T(AV)
870A
dV
D
/dt
1000V/
s
di
T
/dt
300A/
s
Outline type code: X.
See Package Details for further information.
VOLTAGE RATINGS
4500
DG758BX45
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 100mA,
I
RRM
= 50mA
Repetitive Peak Off-state Voltage
V
DRM
V
Repetitive Peak Reverse Voltage
V
RRM
V
16
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
V
D
= 66% V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/
s, Cs = 6
F
RMS on-state current
A
A
A
3000
870
1365
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled. Half sine 50Hz.
I
T(RMS)
I
T(AV)
Mean on-state current
DG758BX45
Gate Turn-off Thyristor
Replaces March 1998 version, DS4095-5.3
DS4095-6.0 January 2000
DG758BX45
2/19
SURGE RATINGS
Conditions
16.0
1.28 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
100
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 3000V, I
T
= 3000A, T
j
= 125
o
C, I
FG
> 40A,
Rise time > 1.0
s
A/
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
20
Min.
-
-
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
24
60
-
50
30
-
-
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.0392
-
0.0036
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.0146
o
C/W
Anode side cooled
o
C/W
0.0233
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-40
125
37.0
33.0
-40
kN
o
C/W
Clamping force 35.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
-
Peak stray inductance in snubber circuit
L
S
200
nH
DG758BX45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
10000
V
RGM
= 16V, No gate/cathode resistor
C
I
T
= 3000A, V
DM
= 3000V
Snubber Cap Cs = 6.0
F,
di
GQ
/dt = 40A/
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4.0
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
3.5
A
mA
mJ
3000
-
V
D
= 2250V
I
T
= 3000A, dI
T
/dt = 300A/
s
I
FG
= 40A, rise time < 1.0
s
s
1.5
-
-
3.0
s
-
6300
mJ
-
20.6
s
s
2.2
-
s
22.8
-
-
20000
C
-
830
A
At 3000A peak, I
G(ON)
= 8A d.c.
DG758BX45
4/19
CURVES
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Instantaneous on-state voltage - (V)
1000
2000
3000
4000
5000
Instantaneous on-state current - (A)
FIG 2 MAXIMUM LIMIT ON STATE CHARACTERISTICS
T
j
= 125C
T
j
= 25C
Measured under pulse
conditions I
G(ON)
= 8A
0
5.5
-50
-25
0
25
50
75
100
125
0.5
1.0
1.5
2.0
Gate trigger voltage V
GT
- (V)
8.0
6.0
4.0
2.0
0
Gate trigger current I
GT
- (A)
Junction temperature T
j
- (C)
V
GT
I
GT
0
Fig.1 Maximum gate trigger voltage/current vs junction temperature
Fig.2 On-state characteristics
DG758BX45
5/19
0
1.0
2.0
3.0
4.0
5.0
6.0
Snubber capacitance Cs - (F)
0
500
1000
1500
2000
2500
3000
Maximum permissible turn-off
current I
TCM
- (A)
Conditions:
T
j
= 125C,
V
DM
= 2000V
dI
GQ
/dt = 40A/s
0
0.005
0.010
0.015
0.020
0.001
0.01
0.1
1.0
10
Time - s
Thermal impedance -
C/W
dc
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (ms)
0
10
20
30
40
Peak half sine wave on-state
current - (kA)
Fig.3 Maximum dependence of I
TCM
on C
S
Fig.4 Maximum (limit) transient thermal impedance - double side cooled
Fig.5 Surge (non-repetitive) on-state current vs time
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