DG858BW45
1/19
DG858BW45
Repetitive Peak
Off-state Voltage
V
DRM
V
FEATURES
q
Double Side Cooling
q
High Reliability In Service
q
High Voltage Capability
q
Fault Protection Without Fuses
q
High Surge Current Capability
q
Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
q
Variable speed A.C. motor drive inverters (VSD-AC)
q
Uninterruptable Power Supplies
q
High Voltage Converters
q
Choppers
q
Welding
q
Induction Heating
q
DC/DC Converters
KEY PARAMETERS
I
TCM
3000A
V
DRM
4500V
I
T(AV)
1180A
dV
D
/dt
1000V/
s
di
T
/dt
300A/
s
Package outline type code: W.
See Package Details for further information.
VOLTAGE RATINGS
4500
Conditions
Type Number
T
vj
= 125
o
C, I
DM
= 100mA,
I
RRM
= 50mA
Repetitive Peak Reverse
Voltage
V
RRM
V
16
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
I
TCM
T
HS
= 80
o
C. Double side cooled, half sine 50Hz
V
D
= 66% V
DRM
, T
j
= 125
o
C, di
GQ
/dt = 40A/
s, Cs = 3
F
RMS on-state current
A
A
A
3000
1180
1850
Units
Repetitive peak controllable on-state current
T
HS
= 80
o
C. Double side cooled, half sine 50Hz
I
T(RMS)
I
T(AV)
Mean on-state current
Figure 1. Package outline
DG858BW45
Gate Turn-off Thyristor
Replaces July 1999 version, DS4096-3.0
DS4096-4.0 January 2000
DG858BW45
2/19
SURGE RATINGS
Conditions
20.0
2.0 x 10
6
kA
A
2
s
Surge (non-repetitive) on-state current
I
2
t for fusing
10ms half sine. T
j
= 125
o
C
10ms half sine. T
j
=125
o
C
di
T
/dt
Critical rate of rise of on-state current
300
130
V/
s
Max.
Units
Rate of rise of off-state voltage
dV
D
/dt
1000
V/
s
To 66% V
DRM
; V
RG
= -2V, T
j
= 125
o
C
I
TSM
Symbol
Parameter
I
2
t
V
D
= 3000V, I
T
= 3000A, T
j
= 125
o
C,
I
FG
> 40A, Rise time > 1.0
s
A/
s
To 66% V
DRM
; R
GK
1.5
, T
j
= 125
o
C
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
20
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
24
60
-
50
20
-
-
s
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ
/dt
t
ON(min)
t
OFF(min)
s
A/
s
kW
W
A
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.03
-
0.0021
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.011
o
C/W
Anode side cooled
o
C/W
0.017
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-40
125
44.0
36.0
-40
kN
o
C/W
Clamping force 40.0kN
With mounting compound
DC thermal resistance - junction to
heatsink surface
T
vj
125
o
C
o
C
-
-
Peak stray inductance in snubber circuit I
T
= 3000A, V
D
= V
DRM
, T
j
= 125C, dI/
GQ
= 40A/
s, Cs = 3.0
F
L
S
200
nH
DG858BW45
3/19
CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
12000
V
RGM
= 16V, No gate/cathode resistor
C
I
T
= 3000A, V
DM
= V
DRM
Snubber Cap Cs = 3.0
F,
di
GQ
/dt = 40A/
s
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
4.0
V
V
DRM
= 4500V, V
RG
= 0V
-
100
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
4.0
A
mA
mJ
2700
-
V
D
= 2000V
I
T
= 3000A, dI
T
/dt = 300A/
s
I
FG
= 40A, rise time < 1.0
s
s
2.0
-
-
6.0
s
-
13500
mJ
-
25.0
s
s
2.5
-
s
27.5
-
-
24000
C
-
950
A
At 4000A peak, I
G(ON)
= 10A d.c.
DG858BW45
4/19
CURVES
-50
-25
0
25
50
75
100
125
0.5
1.0
1.5
2.0
Gate trigger voltage V
GT
- (V)
12.5
10.0
7.5
5.0
2.5
Gate trigger current I
GT
- (A)
Junction temperature T
j
- (C)
V
GT
I
GT
0
150
2.5
0
Figure 2. Maximum gate trigger voltage/current vs junction temperature
1.5
2.0
2.5
3.0
3.5
Instantaneous on-state voltage V
TM
- (V)
1000
2000
3000
4000
Instantaneous on-state current I
T
- (A)
Measured under pulse
conditions.
I
G(ON)
= 10A
Half sine wave 10ms
0
4.0
1.0
T
j
= 125C
T
j
= 25C
Figure 3. On-state characteristics
DG858BW45
5/19
0
2.0
4.0
6.0
Snubber capacitance C
s
- (F)
1000
2000
4000
3000
Maximum permissible turn-off
current I
TCM
- (A)
Conditions:
T
j
= 125C,
V
DM
= V
DRM
dI
GQ
/dt = 40A/s
1.0
3.0
5.0
3500
2500
1500
Figure 4. Maximum dependence of I
TCM
on Cs
0
0.005
0.010
0.015
0.001
0.01
0.1
1.0
10
Time - (s)
Thermal impedance -
C/W
dc
100
Figure 5. Maximum (limit) transient thermal impedance - double side cooled
0
10
20
30
0.0001
0.001
0.01
0.1
1.0
Pulse duration - (s)
Peak half sine wave on-state current - (kA)
40
50
Figure 6. Surge (non-repetitive) on-state current vs time
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