DIM100PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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FEATURES
I
10
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM100PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand. This device is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM100PHM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE(sat)
*
(typ)
3.4V
I
C
(max)
100A
I
C(PK)
(max)
200A
*(measured at the power busbars and not the auxiliary terminals)
DIM100PHM33-A000
Half Bridge IGBT Module
PDS5708-1.3 January 2004
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: P
(See package details for further information)
3(E2)
2(C1)
1(E1/C2)
7(E
2)
6(G
2)
8(C
1)
5(E
1)
4(G
1)
DIM100PHM33-A000
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Units
V
V
A
A
W
kA
2
s
V
pC
Max.
3300
20
100
200
1304
5
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (Diode arm)
Isolation voltage - per module
Partial discharge - per module
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M5
Parameter
Thermal resistance - transistor (per switch)
Thermal resistance - diode (per switch)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
96
192
16
150
125
125
5
4
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
THERMAL AND MECHANICAL RATINGS
Internal insulation: AlN
Clearance: 20mm
Baseplate material: AlSiC
CTI (Critical Tracking Index): 175
Creepage distance: 33mm
DIM100PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 100A
V
GE
= 15V, I
C
= 100A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 100A
I
F
= 100A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 2500V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance - per switch
Internal transistor resistance - per switch
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
C
res
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nF
nH
m
A
A
Max.
0.5
7.5
1
6.5
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.4
4.4
100
200
2.5
2.5
23
0.33
30
0.54
650
550
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
DIM100PHM33-A000
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 100A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
=20
L ~ 100nH
I
F
= 100A, V
R
= 1800V,
dI
F
/dt = 500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1400
250
105
550
250
220
75
75
100
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 100A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 20
L ~ 100nH
I
F
= 100A, V
R
= 1800V,
dI
F
/dt = 450A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Typ.
1350
200
75
550
250
150
1.25
40
70
55
DIM100PHM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
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TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
25
50
75
100
125
150
175
200
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
0
1
2
3
4
5
6
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 25C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
25
50
75
100
125
150
175
200
0
2
4
6
8
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
1
3
5
7
V
ge
= 10V
V
ge
= 12V
V
ge
= 15V
V
ge
= 20V
Common emitter
T
case
= 125C
V
ce
is measured at power busbars
and not the auxiliary terminals
0
25
50
75
100
125
150
175
200
225
250
0
25
50
75
100
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
Conditions:
T
c
= 125C,
R
g
= 20 Ohms,
V
cc
= 1800V,
C
ge
= 66nF
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
0
50
100
150
200
250
300
350
10
20
30
40
50
60
Gate resistance, R
g
- (ohms)
Switching energy, E
sw
- (mJ)
E
on
(mJ)
E
off
(mJ)
E
rec
(mJ)
Conditions:
T
c
= 125C
I
C
= 100A
V
cc
= 1800V
C
ge
= 66nF
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