DIM1200DDM17-E000
Preliminary Information
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/9
www.dynexsemi.com
FEATURES
I
Trench Gate Field Stop Technology
I
Low Conduction Losses
I
Low Switching Losses
I
10
s Short Circuit Withstand
I
Isolated MMC Base with AlN Substrates
I
High Thermal Cycling Capability
APPLICATIONS
I
High Reliability Inverters
G
Wind Turbines
G
Motor Controllers
G
UPS Systems
I
Traction
G
Propulsion Drives
G
Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200DDM17-E000 is a dual switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand. This module is
optimised for applications requiring high thermal cycling
capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200DDM17-E000
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
CES
1700V
V
CE(sat)
*
(typ)
2.0V
I
C
(max)
1200A
I
C(PK)
(max)
2400A
*
Measured at auxiliary terminals.
DIM1200DDM17-E000
Dual Switch IGBT Module
Preliminary Information
DS5603-1.4 June 2003
Fig. 1 Dual switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: D
(See package details for further information)
3(C1)
5(E
1
)
6(G
1
)
7(C
1
)
12(C
2
)
11(G
2
)
10(E
2
)
1(E1)
4(E2)
2(C2)
1
3
2
4
12
11
10
7
6
5
8
9
DIM1200DDM17-E000
Preliminary Information
2/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 75C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
kW
kA
2
s
V
PC
Max.
1700
20
1200
2400
6.94
200
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM1200DDM17-E000
Preliminary Information
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/9
www.dynexsemi.com
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
20mm
Clearance:
10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
18
40
8
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
-
DIM1200DDM17-E000
Preliminary Information
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 1200A
V
GE
= 15V, I
C
= 1200A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 1200A
I
F
= 1200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 1000V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
5
25
4
6.4
2.4
3.0
1200
2400
2.3
2.4
-
-
-
-
-
Typ.
-
-
-
5.8
2.0
2.3
-
-
1.9
2.0
105
20
0.27
4500
4300
Min.
-
-
-
5.2
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at auxiliary terminals.
* L is the circuit inductance + L
M
DIM1200DDM17-E000
Preliminary Information
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1200
200
320
900
220
300
14
275
950
180
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= 1.2
R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1200A, V
R
= 900V,
dI
F
/dt = 5200A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1300
300
420
900
250
400
475
1150
320
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= 1.2
R
G(OFF)
= 1.5
L ~ 100nH
I
F
= 1200A, V
R
= 900V,
dI
F
/dt = 5200A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
PDF 
ZIP