DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
s
10
s Short Circuit Withstand
s
Non Punch Through Silicon
s
Isolated Copper Base Plate
APPLICATIONS
s
Inverters
s
Motor Controllers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200MHS17-A000 is a half bridge 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10
s short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200MHS17-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1700V
V
CE(sat)
*
(typ)
2.7V
I
C
(max)
200A
I
C(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
DIM200MHS17-A000
Half Bridge IGBT Module
Replaces issue March 2002, version DS5459-4.0
DS5459-5.1 June 2002
Fig. 1 Half bridge circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: M
(See package details for further information)
3(C1)
2(E2)
1(E1C2)
11(C
2
)
9(C
1
)
6(G
2
)
7(E
2
)
5(E
1
)
4(G
1
)
1
2
3
11
10
8
9
5
4
6
7
DIM200MHS17-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 65C
1ms, T
case
= 110C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1800V, V
2
= 1300V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
V
pC
Max.
1700
20
200
400
1435
7.5
4000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor (per arm)
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Al
2
O
3
Baseplate material:
Cu
Creepage distance:
20mm
Clearance:
8mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
87
194
15
150
125
125
5
5
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
DIM200MHS17-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 200A
V
GE
= 15V, I
C
= 200A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 200A
I
F
= 200A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 1000V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance - per arm
Internal transistor resistance - per arm
Short circuit. I
SC
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
1
10
1
6.5
3.2
4.0
200
400
2.5
2.6
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.3
15
30
-
900
800
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + L
M
DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
590
300
40
320
90
50
-
65
195
42
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 900V,
dI
F
/dt = 3000A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
880
410
60
110
450
85
100
195
64
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 200A
V
GE
=
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 200A, V
R
= 900V,
dI
F
/dt = 2500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
DIM200MHS17-A000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100 120
140
160
180
200
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
E
on
E
off
E
rec
Conditions:
T
c
= 125C,
R
g
= 4.7,
V
cc
= 900V
0
20
40
60
80
100
120
4
10
Gate resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
5
6
7
8
9
E
on
E
off
E
rec
Conditions:
T
c
= 125C,
I
C
= 200A,
V
cc
= 900V
0
100
50
150
200
250
300
350
400
0.5
0
1
1.5
2
2.5
3
3.5
4
4.5
5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 25C
V
ce
is measured at power busbars
and not the auxiliary terminals
V
GE
= 20V
15V
12V
10V
0
150
100
50
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Common emitter.
T
case
= 125C
V
ce
is measured at power busbars
and not the auxiliary terminals
V
GE
= 20V
15V
12V
10V
DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
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Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
0
50
100
150
200
250
300
350
400
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, V
F
- (V)
F
ow
a
rd current, I
F
- (A)
T
j
= 125C
T
j
= 25C
V
F
is measured at power busbars
and not the auxiliary terminals
0
50
100
150
200
250
300
350
400
450
0
200
400
600
800 1000 1200 1400 1600 1800
Collector emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
Conditions:
T
case
= 125C
V
ge
= 15V
R
g(off)
= 4.7ohms
Module
Chip
0
25
50
75
100
125
150
175
200
0
400
800
1200
1600
2000
Reverse voltage, V
R
- (V)
Reverse current, I
R
- (A)
T
j
= 125C
Fig. 10 Transient thermal impedance
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Tr
a
nsient therm
a
l im
p
ed
a
nce,
Z
th (
j
-c)
- (
C
/kW
)
Diode
Transistor
IGBT R
i
(C/KW)
i
(ms)
Diode R
i
(C/KW)
i
(ms)
1
2.10
0.11
4.49
0.01
2
11.62
3.14
25.28
3.21
3
43.85
45.60
74.24
38.58
4
29.53
143.02
90.09
113.97
DIM200MHS17-A000
8/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 11 DC current rating vs case temperature
0
50
100
150
200
250
300
0
20
40
60
80
100
120
140
Case temperature, T
case
- (C)
DC collector current, I
C
- (A)
DIM200MHS17-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
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23
8
106 0.8
108 0.8
3x M6
93 0.3
1
48
0.3
62
0.8
4x Fast on
tabs
28 0.5
28 0.5
31
0.8
2
3
10
11
9
8
4
5
7
6
Nominal weight: 270g
Recommeded fixings for mounting: M6
Recommended mounting torque: 5Nm (44lbs.ins)
Recommended torque for electrical connections (M6): 5Nm (44lbs.ins)
Module outline type code: M
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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