Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
10s Short Circuit Withstand
Soft Punch Through Silicon
Isolated AlSiC Base with AlN substrates
High thermal cycling capability
APPLICATIONS
Choppers
Motor Controllers
Power Supplies
Traction Auxiliaries
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM200PLM33-F000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor
(IGBT) chopper module configured with the lower
arm of the bridge controlled. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10
s short circuit withstand. This device is optimised
for traction drives and other applications requiring
high thermal cycling capability.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PLM33-F000
Note: When ordering, please use the whole part number.
.
KEY PARAMETERS
V
CES
3300V
V
CE (sat)
*
(typ)
2.8V
I
C
(max)
200A
I
C(PK)
(max)
400A
*
(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Chopper circuit diagram
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
DIM200PLM33-F000
IGBT
Chopper Module
DS5863- 1.0 September 2005 (LN24182)
SEMICONDUCTOR
DIM200PLM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under `Absolute Maximum Ratings' may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25 C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
= 0V
3300
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
= 90 C
200
A
I
C(PK)
Peak collector current
1ms, T
case
=115 C
400
A
P
max
Max. transistor power dissipation
T
case
= 25 C, T
j
= 150 C
2.6
W
Diode I
2
t value (IGBT arm)
20
I
2
t
Diode I
2
t value (Diode arm)
V
R
= 0, t
P
= 10ms, T
vj
= 125 C
20
kA
2
S
V
isol
Isolation voltage per module
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
6000
V
Q
PD
Partial discharge - per module
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RMS
10
pC
SEMICONDUCTOR
DIM200PLM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AIN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index):
175
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Thermal resistance - transistor
Continuous dissipation
junction to case
-
-
48
C/kW
Thermal resistance diode (IGBT
arm)
R
th(j-c)
Thermal resistance- diode ( Diode
arm)
Continuous dissipation
junction to case
-
-
96
96
C/kW
C/kW
R
th(c-h)
Thermal resistance case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
-
16
C/kW
T
j
Junction temperature
Transistor
-
-
150
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
-
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections M5
-
-
4
Nm
SEMICONDUCTOR
DIM200PLM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
I
ces
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
-
-
1
mA
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125 C
-
-
15
mA
I
ces
Gate leakage current
V
GE
= 20V, V
CE
= 0V
-
-
1
A
V
GE(TH)
Gate threshold voltage
I
C
= 40mA, V
GE
= V
CE
5.5
6.5
7.0
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
= 15V, I
C
= 200A
-
2.8
-
V
V
GE
= 15V, I
C
= 200A, T
case
= 125 C
-
3.6
-
V
I
F
Diode forward current
DC
-
-
200
A
I
FM
Diode maximum forward current
t
p
= 1ms
-
-
400
A
Diode forward voltage (IGBT arm)
2.9
-
V
F
Diode forward voltage (Diode arm)
I
F
= 200A
-
2.9
-
V
3.0
-
Diode forward voltage (IGBT arm)
Diode forward voltage (Diode arm)
I
F
= 200A, T
case
= 125 C
-
3.0
-
V
C
ies
Input capacitance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
36
-
nF
L
M
Module inductance per arm
-
-
40
-
nH
R
INT
Internal resistance per arm
-
-
0.5
-
m
SC
Data
Short circuit. I
sc
T
j
= 125 C, V
cc
= 2500V,
I
1
-
1000
-
A
t
p
10s,
V
CE(max)
= V
CES
- L*di/dt
I
2
-
930
-
A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
*
L is the circuit inductance + L
M
SEMICONDUCTOR
DIM200PLM33-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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ELECTRICAL CHARACTERISTICS
T
case
= 25 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 200A
-
1950
-
ns
t
f
Fall time
V
GE
= 15V
-
170
-
ns
E
OFF
Turn-off energy loss
V
CE
= 1800V
-
220
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 16.5
-
1180
-
ns
t
r
Rise time
L
100nH
-
225
-
ns
Q
g
Gate charge
C
ge
= 56nF
-
5
-
C
E
ON
Turn-on energy loss
R
G(ON)
= 7.5
-
290
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 200A, V
R
= 1800V,
-
80
-
C
I
rr
Diode reverse current
dl
F
/dt = 1600A/s
-
144
-
A
E
REC
Diode reverse recovery energy
Diode arm
-
75
-
mJ
T
case
= 125 C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
t
d(off)
Turn-off delay time
I
C
= 200A
-
2200
-
ns
t
f
Fall time
V
GE
= 15V
-
190
-
ns
E
OFF
Turn-off energy loss
V
CE
= 1800V
-
265
-
mJ
t
d(on)
Turn-on delay time
R
G(ON)
= R
G(OFF)
= 16.5
-
1150
-
ns
t
r
Rise time
L
100nH, C
ge
= 56nF
-
280
-
ns
E
ON
Turn-on energy loss
R
G(ON)
= 7.5
-
390
-
mJ
Q
rr
Diode reverse recovery charge
I
F
= 200A, V
R
= 1800V,
-
125
-
C
I
rr
Diode reverse current
dl
F
/dt = 1600A/s
-
155
-
A
E
REC
Diode reverse recovery energy
Diode arm
-
130
-
mJ
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