DIM2400ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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FEATURES
I
10
s Short Circuit Withstand
I
High Thermal Cycling Capability
I
Non Punch Through Silicon
I
Isolated MMC Base with AlN Substrates
APPLICATIONS
I
High Reliability Inverters
I
Motor Controllers
I
Traction Drives
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM2400ESM12-A000 is a single switch 1200V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
s short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM2400ESM12-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
*
(typ)
2.2V
I
C
(max)
2400A
I
C(PK)
(max)
4800A
*(measured at the power busbars and not the auxiliary terminals)
DIM2400ESM12-A000
Single Switch IGBT Module
Replaces July 2002, version DS5536-2.1
DS5529-3.0 March 2003
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: E
(See package details for further information)
C2
C1
Aux C
G
Aux E
E1
E2
E3
External connection
External connection
C3
DIM2400ESM12-A000
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1300V, V
2
= 1000V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Units
V
V
A
A
W
kA
2
s
V
PC
Max.
1200
20
2400
4800
20830
900
2500
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value (IGBT arm)
Isolation voltage - per module
Partial discharge - per module
DIM2400ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
32mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
6
13.3
6
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
-
DIM2400ESM12-A000
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Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 120mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 2400A
V
GE
= 15V, I
C
= 2400A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 2400A
I
F
= 2400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 900V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Internal transistor resistance
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
A
A
Max.
3
75
12
6.5
2.8
3.3
2400
4800
2.4
2.4
-
-
-
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.1
2.1
270
10
0.09
16500
13500
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + L
M
DIM2400ESM12-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1370
230
520
250
230
180
26
310
1000
150
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1
L ~ 50nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 9500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
O
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1570
230
600
360
290
200
540
1260
260
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 1
L ~ 50nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 8500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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