DIM250WLS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/8
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KEY PARAMETERS
V
CES
600V
V
CE(sat)
*
(typ)
2.1V
I
C
(max) 250A
I
C(PK)
(max) 500A
*(measured at the power busbars and not the auxiliary terminals)
FEATURES
I
n - Channel
I
High Switching Speed
I
Low Forward Voltage Drop
I
Isolated Base
APPLICATIONS
I
Choppers
I
PWM Motor Contro
l
I
UPS
The Powerline range of modules includes half bridge,
chopper, bi-directional, dual and single switch configurations
covering voltages from 600V to 3300V and currents up to 3600A.
The DIM250WKS06-S000 is a 600V n channel enhancement
mode, insulated gate bipolar transistor (IGBT) chopper module
configured with the lower arm of the bridge controlled. The
module is suitable for a variety of medium voltage applications in
motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area
(RBSOA) for ultimate reliability in demanding applications.
These modules incorporate electrically isolated base plates
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
Typical applications include dc motor drives, ac pwm
drivesand ups systems.
ORDERING INFORMATION
Order as:
DIM250WKS06-S000
Note: When ordering, use complete part number.
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: W
(See package details for further information)
PDS5731-1.0 February 2004
DIM250WLS06-S000
IGBT Chopper Module (Lower Arm Control)
3(K)
1(A,C2)
2(E2)
6(G
2
)
7(E
2
)
DIM250WKLS06-S000
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Test Conditions
V
GE
= 0V
-
T
case
= 65C
1ms, T
case
= 95C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Units
V
V
A
A
W
kA
2
s
kV
Max.
600
20
250
500
1157
TBD
2.5
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - transistor arm
Thermal resistance - diode (per arm)
(Antiparallel and freewheel diode)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Max.
108
203
15
150
125
125
5
5
Typ.
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
3
2.5
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al
2
O
3
Clearance: 13mm
Baseplate material: Cu
CTI (Critical Tracking Index): 175
Creepage distance: 24mm
DIM250WLS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
www.dynexsemi.com
Note:
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + L
M
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 10mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 250A
V
GE
= 15V, I
C
= 250A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 250A
I
F
= 250A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
Parameter
Collector cut-off current
(IGBT and Diode arm)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
(IGBT and Diode arm)
Input capacitance
Module inductance
Internal transistor resistance - per arm
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
L
M
R
INT
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nH
m
Max.
1
10
1
7.5
2.6
2.8
250
500
1.8
1.8
-
-
Typ.
-
-
-
5.5
2.1
2.3
-
-
1.5
1.5
27
20
0.23
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
DIM250WKLS06-S000
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
600
250
20
330
130
12
2
15
185
4
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 250A
V
GE
=
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
650
500
30
400
160
18
23
200
5
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 250A
V
GE
=
15V
V
CE
= 300V
R
G(ON)
= R
G(OFF)
= 4.7
L ~ 100nH
I
F
= 250A, V
R
= 300V,
dI
F
/dt = 3600A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
DIM250WLS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/8
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
100
50
200
300
400
150
250
350
450
500
0
1.0
2.0
3.0
4.0
5.0
6.0
Common emitter
T
case
= 125C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
0
50
100
150
200
500
0
1
2.0
3
4
5
Collector-emitter voltage, V
ce
- (V)
Collector current, I
c
- (A)
450
250
300
350
400
Common emitter
T
case
= 25C
V
ce
is measured at power
busbars and not the
auxiliary terminals
V
GE
= 10V
V
GE
= 12V
V
GE
= 15V
V
GE
= 20V
Fig.4 Typical switching energy vs collector current
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
250
300
Collector current, I
C
- (A)
Switching energy, E
sw
- (mJ)
Conditions:
T
case
= 125C
V
cc
= 300V
R
g
= 4.7 ohms
E
on
E
off
E
rec
Fig.5 Typical switching energy vs gate resistance
0
5
10
15
20
25
30
35
40
2
10
12
14
16
Gate Resistance, R
g
- (Ohms)
Switching energy, E
sw
- (mJ)
4
6
8
E
off
E
on
E
rec
Conditions:
T
case
= 125C
V
cc
= 300V
I
C
= 250A
DIM250WKLS06-S000
6/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig.8 Transient thermal impedance
1
10
100
1000
0.001
0.01
1
0.1
10
Pulse width, t
p
- (s)
Transient thermal impedance, Z
th (j-c)
- (
C/kW )
Transistor
Diode
IGBT
R
i
(C/KW)
i
(ms)
Diode
R
i
(C/KW)
i
(ms)
1
2.5411
0.1069
4.6432
0.0895
2
10.0645
4.363
25.8208
2.6571
3
13.6426
21.9182
24.1609
17.3886
4
81.7155
92.4022
147.9106
71.8108
Fig.7 Reverse bias safe operating area
0
100
200
300
400
600
500
700
800
900
0
200
400
600
800
Collector-emitter voltage, V
ce
- (V)
Collector current, I
C
- (A)
T
j
= 125C
V
ge
= 15V
R
g
= 4.7 Ohms
Module I
C
Chip I
C
Fig.6 Diode typical forward characteristics
0
50
100
150
200
250
300
350
400
450
500
0
0.5
1.0
1.5
2.0
2.5
3.0
Foward voltage, V
F
- (V)
Foward current, I
F
- (A)
T
j
= 25C
T
j
= 125C
V
F
is measured at power busbars
and not the auxiliary terminals
Fig.7 Diode reverse bias safe operating area
0
20
40
60
80
100
120
140
160
180
200
0
100
200
300
400
500
600
700
Reverse voltage, V
R
- (V)
Reverse recovery current, I
rr
- (A)
Ir(A)
T
j
= 125C
DIM250WLS06-S000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/8
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Fig. 15 Package details
Nominal weight: 420g
Module outline type code: W
3(K)
1(A,C2)
2(E2)
6(G
2
)
7(E
2
)
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 5
3
. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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