DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
www.dynexsemi.com
FEATURES
I
Non Punch Through Silicon
I
10
s Short Circuit Withstand
I
Isolated MMC Base with AlN Substrates
I
High Thermal Cycling Capability
APPLICATIONS
I
Choppers
I
Motor Controllers
I
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM400GCM33-A000 is a 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
chopper module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10
s short circuit withstand.
This device is optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM400GCM33-A000
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
CES
3300V
V
CE(sat)
*
(typ)
3.2V
I
C
(max)
400A
I
C(PK)
(max)
800A
*(measured at the power busbars and not the auxiliary terminals)
DIM400GCM33-A000
IGBT Chopper Module
DS5613-1.1 June 2003
Fig. 1 Chopper circuit diagram
Fig. 2 Electrical connections - (not to scale)
Outline type code: G
(See package details for further information)
3 (C1)
7 (E
1
)
6 (G
1
)
5 (C
1
)
1 (E1)
4 (A)
2 (K)
DIM400GCM33-A000
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Test Conditions
V
GE
= 0V
-
T
case
= 85C
1ms, T
case
= 115C
T
case
= 25C, T
j
= 150C
V
R
= 0, t
p
= 10ms, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 3500V, V
2
= 2600V, 50Hz RMS
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I
2
t
V
isol
Q
PD
Units
V
V
A
A
W
kA
2
s
V
pC
Max.
3300
20
400
800
5216
80
6000
10
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
2
t value
Isolation voltage - per module
Partial discharge - per module
DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
www.dynexsemi.com
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
33mm
Clearance:
20mm
CTI (Critical Tracking Index): 175
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor arm
Thermal resistance - diode (both arms)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
24
48
6
150
125
125
5
2
10
Typ.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
40
-
-
-
DIM400GCM33-A000
4/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS - PER ARM UNLESS OTHERWISE STATED
T
case
= 25C unless stated otherwise.
Test Conditions
V
GE
= 0V, V
CE
= V
CES
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125C
V
GE
=
20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 400A
V
GE
= 15V, I
C
= 400A, , T
case
= 125C
DC
t
p
= 1ms
I
F
= 400A
I
F
= 400A, T
case
= 125C
V
CE
= 25V, V
GE
= 0V, f = 1MHz
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125C, V
CC
= 2500V,
I
1
t
p
10
s, V
CE(max)
= V
CES
L*. di/dt
I
2
IEC 60747-9
Parameter
Collector cut-off current
Gate leakage current (IGBT arm)
Gate threshold voltage (IGBT arm)
Collector-emitter saturation voltage
(IGBT arm)
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance (IGBT arm)
Reverse transfer capacitance (IGBT arm)
Module inductance - per arm
Internal resistance - per arm
Short circuit. I
SC
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
V
F
C
ies
C
res
L
M
R
INT
SC
Data
Units
mA
mA
A
V
V
V
A
A
V
V
nF
nF
nH
m
A
A
Max.
2
30
4
6.5
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
3.2
4.0
400
800
2.5
2.5
90
1.3
25
0.26
2600
2200
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
Note:
Measured at the power busbars and not the auxiliary terminals
L* is the circuit inductance + L
M
DIM400GCM33-A000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
C
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
-
Typ.
1300
200
350
570
300
550
5
180
240
230
Min.
-
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 4.7
C
ge
= 68nF
L ~ 100nH
I
F
= 400A, V
R
= 1800V,
dI
F
/dt = 1750A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS - IGBT ARM ONLY
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
g
Q
rr
I
rr
E
rec
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
C
A
mJ
Max.
-
-
-
-
-
-
-
-
-
Typ.
1450
250
430
500
350
800
340
320
430
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 400A
V
GE
=
15V
V
CE
= 1800V
R
G(ON)
= R
G(OFF)
= 4.7
C
ge
= 68nF
L ~ 100nH
I
F
= 400A, V
R
= 1800V,
dI
F
/dt = 1500A/
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
PDF 
ZIP