Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM400XSM65-K000
Single Switch IGBT Module
DS5808-1.1 October 2005 (LN24289)
FEATURES
High Thermal Cycling Capability
Soft Punch Through Silicon
Isolated MMC Base with AlN Substrates
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 2400A.
The DIM400XSM65-K000 is a single switch 6500V,n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide reverse
bias safe operating area (RBSOA
)
. This device is
optimised for traction drives and other applications
requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety
.
ORDERING INFORMATION
Order As:
DIM400XSM65-K000
Note: When ordering, please use the complete part number
KEY PARAMETERS
V
CES
6500V
V
CE(sat)
*
(typ)
4.0V
I
C
(max) 400A
I
C(PK)
(max) 800A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Fig. 2 Electrical connections - (not to scale)
DIM400XSM65-K000
2
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8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate
safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
V
CES
Collector-emitter voltage
V
GE
=0V, T
VJ
= -40 C
5800
V
V
GE
=0V
6300
V
V
GE
=0V, T
VJ
= 125 C
6500
V
V
GES
Gate-emitter voltage
20
V
I
C
Continuous collector current
T
case
=90 C
400
A
I
C(PK)
Peak collector current
1ms, T
case
=115 C
800
A
P
max
Max.transistor power
dissipation
T
case
=25 C, T
j
=150 C
8.3
kW
I
2
t
Diode I
2
t value (Diode arm)
V
R
=0,t
p
=10ms,T
vj
=125 C
97
kA
2
s
V
isol
Isolation voltage-per module
Commoned terminals to base plate. AC RMS,1
min,50Hz
10.2
kV
Q
PD
Partial discharge-per module
IEC1287.V
1
=7000V, V
2
=5100V, 50Hz RMS
10
pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
56mm
Clearance:
26mm
CTI (Critical Tracking Index):
>600
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
R
th(j-c)
Thermal resistance -transistor (per switch)
Continuous dissipation -
junction to case
-
15
C/kW
R
th(j-c)
Thermal resistance -diode (per switch)
Continuous dissipation -
junction to case
-
30
C/kW
R
th(c-h)
Thermal resistance -case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
-
8
C/kW
T
j
Junction temperature
Transistor
-
-
125
C
Diode
-
-
125
C
T
stg
Storage temperature range
-
-40
-
125
C
Screw torque
Mounting M6
-
-
5
Nm
Electrical connections -M4
-
-
2
Nm
Electrical connections -M8
-
-
10
Nm
DIM400XSM65-K000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
3
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ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
CES
Collector cut-off current
V
GE
=0V,V
CE
=V
CES
3
mA
V
GE
=0V,V
CE
=V
CES
,T
case
=125 C
60
mA
I
GES
Gate leakage current
V
GE
=
20V,V
CE
=0V
8
uA
V
GE(TH)
Gate threshold voltage
I
C
=80mA,V
GE
=V
CE
5.5
6.5
7.5
V
V
CE(sat)
Collector-emitter saturation voltage
V
GE
=15V,I
C
=400A
4.0
V
V
GE
=15V,I
C
=400A,,T
VJ
=125 C
5.6
V
I
F
Diode forward current
DC
400
A
I
FM
Diode maximum forward current
t
p
=1ms
800
A
V
F
Diode forward voltage
I
F
=400A
3.6
V
I
F
=400A,T
VJ
=125 C
4.1
V
C
ies
Input capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
120
nF
C
res
Reverse transfer capacitance
V
CE
=25V,V
GE
=0V,f =1MHz
1.5
nF
L
M
Module inductance
--
20
nH
R
INT
Internal transistor resistance
0.18
m
SC
Data
Short circuit.I SC
T
j
125 C,V
CC
4400V,
I
1
TBD
A
t
p
=
10 us,
I
2
V
CE(max)
=V
CES
L*.di/dt
IEC 60747-9
TBD
A
Note:
Measured at the power busbars and not the auxiliary terminals
L*is the circuit inductance + L
M
DIM400XSM65-K000
4
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8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=400A
6.0
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=3600V
1450
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=6.2
R
G(OFF)
=18
900
ns
t
r
Rise time
C
ge
=44nF
250
ns
E
ON
Turn-on energy loss
L ~200nH
3000
mJ
Q
g
Gate charge
8
uC
Q
rr
Diode reverse recovery charge
I
F
=400A,V
CE
=3600V,
700
uC
I
rr
Diode reverse recovery current
dI
F
/dt =1300A/us
300
A
E
rec
Diode reverse recovery energy
1300
mJ
T
case
= 125C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
t
d(off)
Turn-off delay time
I
C
=400A
6.0
us
t
f
Fall time
V
GE
=15V
250
ns
E
OFF
Turn-off energy loss
V
CE
=3600V
1750
mJ
t
d(on)
Turn-on delay time
R
G(ON)
=6.2
R
G(OFF)
=18
700
ns
t
r
Rise time
C
ge
=44nF
200
ns
E
ON
Turn-on energy loss
L ~200nH
3500
mJ
Q
rr
Diode reverse recovery charge
I
F
=400A,V
CE
=3600V,
1000
uC
I
rr
Diode reverse recovery current
dI
F
/dt =1600A/us
370
A
E
rec
Diode reverse recovery energy
2000
mJ
DIM400XSM65-K000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5
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0
1 0 0
2 0 0
3 0 0
4 0 0
5 0 0
6 0 0
7 0 0
8 0 0
0 .0
1 .0
2 .0
3 . 0
4 . 0
5 .0
6 .0
7 .0
8 . 0
C o lle c to r - e m itte r v o lt a g e , V c e - ( V )
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
V g e = 1 0 V
V g e = 1 2 V
V g e = 1 5 V
V g e = 2 0 V
C o m m o n e m itte r
T c a s e = 2 5 'C
V c e is m e a s u r e d a t
p o w e r b u s b a r a n d n o t
a u x ilia r y t e r m in a ls
0
100
200
300
400
500
600
700
800
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
Collector-emitter voltage, Vce - (V)
C
o
l
l
e
c
t
o
r
c
u
r
r
e
n
t
,
I
c
-
(
A
)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 125'C
Vce is measured at power
busbar and not auxiliary
terminals
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
0
1 0 0
2 0 0
3 0 0
4 0 0
C o lle c to r c u rr e n t, Ic - ( A )
S
w
i
t
c
h
i
n
g
e
n
e
r
g
y
,
E
s
w
-
(
m
J
)
E o ff
E o n
E re c
C o n d itio n s :
T c a s e = 1 2 5 'C
V c e = 3 6 0 0 V
R g (o n ) = 6 . 2 o h m s
R g (o ff) = 1 8 o h m s
C g e = 4 4 n F .
V g e = + /- 1 5 V .
0
1 0 0 0
2 0 0 0
3 0 0 0
4 0 0 0
5 0 0 0
6 0 0 0
7 0 0 0
8 0 0 0
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
G a t e re s is t a n c e , R g - (o h m s )
S
w
it
c
h
in
g
e
n
e
rg
y
,
E
s
w
-
(m
J
)
E o f f
E o n
E r e c
C o n d it io n s :
T c a s e = 1 2 5 'C
I c = 4 0 0 A
V c e = 3 6 0 0 V
C g e = 4 4 n F
V g e = + / - 1 5 V
Fig.5 Typical switching energy vs collector current
Fig.6 Typical switching energy vs gate resistance
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