FEATURES
HIGH INPUT IMPEDANCE
r
Gs
= 100G
HIGH TRANSCONDUCTANCE
Y
FS
= 30,000S
ABSOLUTE MAXIMUM RATINGS
1
@ 25 C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
-55 to +125 C
Maximum Power Dissipation
Continuous Power Dissipation @ +125 C
200mW
Maximum Currents
Drain Current
I
D
= 25mA
Maximum Voltages
Drain to Source
1
V
DSO
= 20V
Gate to Source
V
GSS
= 20V
ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN
TYP MAX UNITS
CONDITIONS
V
DS
Drain to Source Voltage
-20
V
I
DS
= 100A, V
GS
= 0V
V
GS
Gate to Source Voltage
-12
-10
-7
V
I
DS
= 10mA, V
gs
= -10V
2,3
g
fs
Common Source Forward Transconductance 30,000
S
I
DS
= 10mA, V
DS
= -10V, f = 1kHz
g
oss
Common Source Output Conductance
300
S
I
DS
= 10mA, V
DS
= -10V, f = 1kHz
r
Gs
Gate to Source Input Resistance
100
G
V
GS
= 0 to 20V, T
J
to 125 C
C
ISS
Input
Capacitance
8 pF I
DS
= 10mA, V
DS
= -10V
C
RSS
Reverse Transfer Capacitance
1.5
pF
I
DS
= 10mA, V
DS
= -10V
e
n
Noise
Voltage
25 V
I
DS
= 10mA, V
DS
= 10V
BW = 50 to 15kHz
LS320
HIGH INPUT IMPEDANCE
BiFET AMPLIFIER
Linear Integrated Systems
PACKAGE OPTIONS
G
S
D
TO-92
BOTTOM VIEW
1
2
3
D S G
1
2
3
SOT-23
TOP VIEW
D
S
G
FUNCTIONAL SCHEMATIC
S
S
D
2
1
3
BOTTOM VIEW
TO-72
4
G
1.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
2.
The gate to source voltage must never exceed 100V, t < 10ms.
3.
Additional screening available
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otherwise under any patent or patent rights of Linear Integrated Systems.
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Linear Integrated Systems
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