Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
3
5
BOTTOM VIEW
2
6
ELECTRICAL CHARACTERISTICS @ 25
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS350 LS351 LS352
UNITS
CONDITIONS
BV
CBO
Collector to Base Voltage
25
45
60
MIN.
V
I
C
= 10
A
I
E
= 0
BV
CEO
Collector to Emitter Voltage
25 45
60
MIN.
V
I
C
= 10
A
I
B
= 0
BV
EBO
Emitter to Base Voltage
6.2
6.2
6.2
MIN.
V
I
E
= 10
A I
C
= 0 NOTE 2
BV
CCO
Collector to Collector Voltage
30 60
100
MIN.
V
I
C
= 10
A
I
E
= 0
h
FE
DC Current Gain
100
150
200
MIN.
I
C
= 10
A
V
CE
= 5V
600
600
MAX.
h
FE
DC Current Gain
100
150
200
MIN.
I
C
= 100
A
V
CE
= 5V
600
600
MAX.
h
FE
DC Current Gain
100
150
200
MIN.
I
C
= 1mA,
V
CE
= 5V
V
CE
(SAT)
Collector Saturation Voltage
0.5
0.5
0.5
MAX.
V
I
C
= 1mA
I
B
= 0.1mA
I
CBO
Collector Cutoff Current
0.2
0.2
0.2
MAX.
nA
I
E
= 0
V
CB
= NOTE 3
I
EBO
Emitter Cutoff Current
0.2
0.2
0.2
MAX.
nA
I
C
= 0
V
EB
=3V
C
OBO
Output Capacitance
2
2
2
MAX.
pF
I
E
= 0
V
CB
= 5V
C
C1C2
Collector to Collector Capacitance
2
2
2
MAX.
pF
V
CC
= 0
I
C1C2
Collector to Collector Leakage Current
0.5
0.5
0.5
MAX.
nA
V
CC
= NOTE4
f
T
Current Gain Bandwidth Product
200
200
200
MIN.
MHz
I
C
= 1mA
V
CE
= 5V
NF
Narrow Band Noise Figure
3
3
3
MAX.
dB
I
C
= 100
A
V
CE
= 5V
BW = 200Hz R
G
= 10 K
f = 1KHz
B1 E1 E2 B2
C1
C2
26 X 29 MILS
E1
E2
C1
C2
B1
B2
LS350 LS351 LS352
MONOLITHIC DUAL
PNP
TRANSISTORS
FEATURES
HIGH GAIN
h
FE
200 @ 10
A - 1mA
TIGHT V
BE
MATCHING
|V
BE1
-V
BE2
| = 0.2mV TYP.
HIGH f
T
275MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
C (unless otherwise noted)
I
C
Collector Current
10mA
Maximum Temperatures
Storage Temperature
-65
to +200
C
Operating Junction Temperature
+150
C
Maximum Power Dissipation ONE SIDE BOTH SIDES
Device Dissipation @ Free Air
250mW
500mW
Linear Derating Factor
2.3mW/
C
4.3mW/
C
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
MATCHING CHARACTERISTICS
SYMBOL
CHARACTERISTICS
LS350
LS351
LS352
UNITS
CONDITIONS
|V
BE1
-V
BE2
|
Base Emitter Voltage Differential
1
0.4
0.2
TYP.
mV
I
C
= 10
A
V
CE
= 5V
5
1.0
0.5
MAX.
mV
|(V
BE1
-V
BE2
)|/
C
Base Emitter Voltage Differential
2
1
0.5
TYP.
V/
C
I
C
=
10
A
V
CE
= 5V
Change with Temperature
20
10
2
MAX.
V/
C
T
A
= -55
C to +125
C
|I
B1
- I
B2
|
Base Current Differential
5
5
MAX.
nA
I
C
= 10
A
V
CE
= 5V
|
(I
B1
- I
B2
)|/
C
Base Current Differential
0.5
0.3
MAX.
nA/
C
I
C
= 10
A,
V
CE
= 5V
Change with Temperature
T
A
= -55
C to +125
C
h
FE1
/h
FE2
DC Current Gain Differential
10
5
5
TYP.
%
I
C
= 10
A
V
CE
= 5V
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10
A.
3. For LS350: V
CB
= 20V; for LS351 & LS352: V
CB
= 30V.
4. For LS351: V
CC
=
45V; for LS352: V
CC
=
80V; for LS350: V
CC
=
25V.
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
C1 1
2
3
4
5
6
7
8
B1
E1
N/C
N/C
C2
B2
E2
P-DIP
C1 1
2
3
4
5
6
7
8
B1
E1
N/C
N/C
C2
B2
E2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
SOIC
N/C
0.320
0.290
(8.13)
(7.37)
0.405
MAX.
(10.29)
(4.78)
(5.00)
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