Linear Integrated Systems
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
1 7
3
5
BOTTOM VIEW
2
6
24 X 27 MILS
D1
D2
G1
S1
S2
G2
D1
D2
S1
G2
G1
S2
ELECTRICAL CHARACTERISTICS @ 25
C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
LS5911 LS5912 LS5912C
UNITS CONDITIONS
|V
GS1
-
V
GS2
|
/
T
Drift vs. Temperature
20
40
40
MAX.
V/
C
V
DG
= 10V
I
D
= 5mA
T
A
= -55
C to +125
C
|V
GS1
-
V
GS2
|
Offset Voltage
10
15
40
MAX.
mV
V
DG
= 10V
I
D
= 5mA
LS5911 LS5912 LS5912C
WIDEBAND HIGH GAIN
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
HIGH TRANSCONDUCTANCE
THROUGH 100MHz
gfs>4000
mho
LOW INPUT CAPACITANCE
C
ISS
=5pf max.
SECOND SOURCE ALTERNATIVE TO INTERSIL, NATIONAL, SILICONIX
DIRECT PLUG IN REPLACEMENT
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25
C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-65
to +150
C
Operating Junction Temperature
+150
C
Maximum Voltage and Current for Each Transistor NOTE 1
-V
GSS
Gate Voltage to Drain or Source
35V
-V
DSO
Drain to Source Voltage
30V
-I
G(f)
Gate Forward Current
50mA
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
500mW @ +125
C
SYMBOL
CHARACTERISTICS
MIN. MAX. UNITS CONDITIONS
BV
GSS
Gate-Source Breakdown Voltage
25
--
V
I
G
= -1
A
V
DS
= 0
TRANSCONDUCTANCE
g
fs
Common-Source Forward
4000
10,000
mho
V
DG
= 10V
I
D
= 5mA
f= 1kHz
g
fs
Common-Source Forward
4000
10,000
mho
f= 100MHz
|g
fs1
/g
fs2
|
Transconductance Ratio
0.95
1
%
f=1kHz
NOTE 2
DRAIN CURRENT
I
DSS
Saturation Drain Current
7
40
mA
V
DS
= 10V
V
GS
= 0 V
|I
DSS1
/I
DSS2
|
Saturation Drain Current Ratio
0.95
1
%
NOTE 2
GATE VOLTAGE
V
GS
(off) or V
P
Pinchoff Voltage
1
5
V
V
DS
= 10V
I
D
= 1nA
V
GS
Gate-Source Voltage
0.3
4
V
V
DG
= 10V
I
D
= 5mA
GATE CURRENT
-I
G
Operating
--
50
pA
V
DG
= 10V
I
D
= 5mA
-I
G
High Temperature
--
50
nA
V
DG
= 10V
I
D
= 5mA
T
A
= +125
C
|I
G1
-I
G2
|
Differential Gate Current
--
20
nA
-I
GSS
At Full Conduction
--
50
pA
V
DG
= 15V
V
DS
= 0
-I
GSS
High Temperature
--
200
nA
T
A
= +125
C
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 TEL: (510) 490-9160 FAX: (510) 353-0261
SYMBOL
CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS
OUTPUT CONDUCTANCE
G
OS
Common-Source Output Conductance
--
--
100
mho
V
DG
= 10V
I
D
= 5mA
f= 1kHz
G
OS
Common-Source Output Conductance
--
--
150
mho
f= 100MHz
NOISE
NF
Figure
--
--
1
dB
V
DG
= 10V
I
D
= 5mA
R
G
= 100k
f= 10kHz
e
n
Voltage
--
--
20
nV/
Hz
V
DG
= 10V
I
D
= 5mA
f= 10KHz
CAPACITANCE
C
ISS
Input
--
--
5
pF
V
DG
= 10V
I
D
= 5mA
f= 1MHz
C
RSS
Reverse Transfer
--
--
1.2
pF
TO-71
Six Lead
0.230
0.209
DIA.
DIA.
0.195
0.175
0.030
MAX.
0.500 MIN.
0.150
0.115
0.019
0.016
DIA.
6 LEADS
3
2
1
8
4
5
6
0.046
0.036
45
0.048
0.028
0.100
0.050
7
TO-78
0.335
0.370
0.305
0.335
0.016
0.019
0.165
0.185
0.040
MAX.
DIM. A
0.016
0.021
DIM. B
MIN. 0.500
0.200
0.100
0.100
0.028
0.034
45
1
2 3 4
5
6
7
8
0.029
0.045
SEATING
PLANE
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
P-DIP
A
S1 1
2
3
4
5
6
7
8
D1
G1
N/C
S2
N/C
G2
D2
0.320
0.290
(8.13)
(7.37)
0.405
MAX
(10.29)
B
SOIC
S1 1
2
3
4
5
6
7
8
D1
SS
G1
S2
G2
SS
D2
A
S1 1
2
3
4
5
6
7
8
D1
G1
N/C
S2
N/C
G2
D2
0.150
0.158
(3.81)
(4.01)
0.188
0.197
0.228
0.244
(5.79)
(6.20)
(4.78)
(5.00)
B
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
2. Assumes smaller value in numerator.
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