MP03XXX 175 Series
1/10
Code
Circuit
HBT
HBP
HBN
VOLTAGE RATINGS
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
Conditions
1600
1400
1200
1000
MP03/175-16
MP03/175-14
MP03/175-12
MP03/175-10
T
(Vj)
= 125
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Lower voltage grades available. 1800V product also available -
consult factory. For full description of part number see
"Ordering instructions" on page 3.
Module outline type code: MP03.
See Package Details for furtyher information.
Parameter
Units
175
146
A
A
Conditions
148
A
T
case
= 75
o
C
T
heatsink
= 75
o
C
T
heatsink
= 85
o
C
T
case
= 85
o
C
T
case
= 75
o
C
I
T(RMS)
RMS value
A
123
A
275
Mean on-state current
Halfwave, resistive load
Max.
Symbol
I
T(AV)
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
CURRENT RATINGS - PER ARM
PACKAGE OUTLINE
KEY PARAMETERS
V
DRM
1600V
I
TSM
6800A
I
T(AV)
(per arm)
175A
V
isol
2500V
CIRCUIT OPTIONS
MP03 XXX 175 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces December 1998 version, DS5098-3.0
DS5098-4.0 January 2000
MP03 XXX 175 Series
2/10
Symbol
Parameter
Conditions
Max.
Units
V
R
= 0
A
2
s
A
2
s
6800
5500
I
2
t for fusing
Surge (non-repetitive) on-state current
I
TSM
V
R
= 50% V
RRM
10ms half sine;
T
j
= 125
o
C
10ms half sine;
T
j
= 125
o
C
I
2
t
A
Symbol
Parameter
Conditions
Linear rate of rise of off-state voltage
200*
mA
V/
s
On-state voltage
V
TM
I
RRM
/I
DRM
Peak reverse and off-state current
To 67% V
DRM
T
j
= 125
o
C
At V
RRM
/V
DRM
, T
j
= 125
o
C
At 500A, T
case
= 25
o
C - See Note 1
Rate of rise of on-state current
V
T(TO)
Threshold voltage
V
0.98
From 67% V
DRM
to 500A Repetitive 50Hz
Gate source 10V, 5
Rise time 0.5
s, T
j
=125
o
C
m
0.75
At T
vj
= 125
o
C - See Note 1
At T
vj
= 125
o
C - See Note 1
r
T
On-state slope resistance
* Higher dV/dt values available, contact factory for particular requirements.
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
A
231000
V
R
= 0
V
R
= 50% V
RRM
150000
Units
Max.
1.3
V
30
100
A/
s
Symbol
Parameter
Conditions
o
C/W
Units
o
C/W
o
C/W
Thermal resistance - case to heatsink
per Thyristor or Diode
R
th(j-c)
Virtual junction temperature
T
vj
o
C
o
C
T
sto
Storage temperature range
Mounting torque = 5Nm
with mounting compound
3 phase
halfwave
dc
Commoned terminals to base plate
AC RMS, 1min, 50Hz
Max.
0.23
Thermal resistance - junction to case
per Thyristor or Diode
R
th(c-hs)
o
C/W
0.05
Isolation voltage
V
isol
2.5
0.21
0.22
125
-40 to 125
kV
dI/dt
dV/dt
SURGE RATINGS - PER ARM
THERMAL & MECHANICAL RATINGS
DYNAMIC CHARACTERISTICS - THYRISTOR
MP03XXX 175 Series
3/10
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.25
Typ.
mA
V
V
GD
Gate trigger voltage
150
V
GT
I
GT
Gate trigger current
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
-
-
-
V
30
0.25
V
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
-
-
10
I
FGM
Peak forward gate current
Peak forward gate voltage
V
FGM
V
FGN
Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
t
p
= 25
s
-
-
100
5
W
W
Adequate heatsinking is required to maintain the base temperature
at 75
o
C if full rated current is to be achieved. Power dissipation
may be calculated by use of V
T(TO)
and r
T
information in accordance
with standard formulae. We can provide assistance with
calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish of
N6 (32
in) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build up
and foreign material. Care should be taken to ensure no foreign
particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces. This
should ideally be 0.05mm (0.002") per surface to ensure optimum
thermal performance.
After application of thermal compound, place the module squarely
over the mounting holes, (or 'T' slots) in the heatsink. Using a
torque wrench, slowly tighten the recommended fixing bolts at
each end, rotating each in turn no more than 1/4 of a revolution at
a time. Continue until the required torque of 5Nm (44lb.ins) is
reached at both ends.
It is not acceptable to fully tighten one fixing bolt before starting to
tighten the others. Such action may DAMAGE the module.
Part number is made up as follows:
MP03 HBT 175 - 12
MP
= Pressure contact module
03
= Outline type
HBT = Circuit configuration code (see "circuit options" - front page)
175
= Nominal average current rating at T
case
= 75
o
C
12
= V
RRM
/100
Examples:
MP03 HBP175-12
MP03 HBN175-16
MP03 HBT175-10
NOTE: Diode ratings and characteristics are comparable with the SCR in types HBP or HBN.
Types HBP and HBN can also be supplied with diode polarity reversed, to special order.
GATE TRIGGER CHARACTERISTICS AND RATINGS
ORDERING INSTRUCTIONS
MOUNTING RECOMMENDATIONS
MP03 XXX 175 Series
4/10
100
10
1.0
0.1
0.001
0.01
0.1
1.0
10
Gate trigger current I
GT
- (A)
Gate trigger voltage V
GT
- (V)
T
j
= 125C
T
j
= 25C
T
j
= -40C
Upper limit 99%
Lower limit 1%
V
FGM
V
GD
I
FGM
5W
10W
50W
75W
100W
Pulse
Width
s
20
25
100
500
1ms
10ms
50
100
100
100
100
100
10
100
100
100
100
100
50
-
400
100
100
100
25
-
-
Pulse Frequency Hz Table gives pulse power P
GM
in watts
0.5
1.0
1.5
2.0
2.5
Instantaneous forward voltage V
F
- (V)
2000
1500
1000
500
0
Instantaneous forward current I
F
- (A)
T
j
= 150C
Measured under pulse conditions
CURVES
Fig. 1 Maximum (limit) on-state characteristics (thyristor or diode) - See Note 1
Fig. 2 Gate trigger characteristics
MP03XXX 175 Series
5/10
1
10
1
2 3 4 5
50
0
5
10
15
Duration
60
100
140
Peak half sine wave on-state current - (kA)
ms
cycles at 50Hz
I
2
t value - A
2
s x 10
3
180
I
2
t
0.001
0.010
0.100
1.0
10
100
Time - (s)
0
0.1
0.2
0.3
Thermal Impedance - (C/W)
R
th(j-hs)
R
th(j-c)
Fig. 3 Transient thermal impedance (DC) - (Thyristor or diode)
Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% V
RRM
, T
case
= 125C (Thyristor or diode)
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