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MP03XXX330 Series
MP03XXX330 Series
Phase Control Dual SCR, SCR/Diode Modules
Replaces 5.0 January 2000 version, DS4483-5.0
DS4483-6.0 July 2002
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (non-toxic) Isolation Medium
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP03HBT330-12 or MP03HBT330-10 or MP03HBT330-08
MP03HBP330-12 or MP03HBP330-10 or MP03HBP330-08
MP03HBN330-12 or MP03HBN330-10 or MP03HBN330-08
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
DRM
1200V
I
TSM
10600A
I
T(AV)(per arm)
334A
V
isol
3000V
Code
Circuit
HBT
HBP
HBN
Fig.1 Circuit diagrams
Fig. 2 Electrical connections - (not to scale)
Module type code: MP03.
For further information see Package Details.
Lower voltage grades available.
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type
Number
1200
1000
800
MP03XXX330-12
MP03XXX330-10
MP03XXX330-08
T
vj
= 130
o
C
I
DRM
= I
RRM
= 30mA
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Conditions
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MP03XXX330 Series
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Test Conditions
Half wave resistive load
T
case
= 75C
T
case
= 85C
T
case
= 75C
10ms half sine, T
j
= 130C
V
R
= 0
10ms half sine, T
j
= 130C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
334
289
524
10.6
560 x 10
3
8.5
360 x 10
3
3000
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M5
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.12
0.13
0.14
0.05
130
130
5 (44)
6 (55)
950
Min.
-
-
-
-
-
40
-
-
-
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MP03XXX330 Series
Units
mA
V/
s
A/
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 130C
To 67% V
DRM
, T
j
= 130C
From 67% V
DRM
to 600A,
Repetitive 50Hz
gate source 10V, 5
,
t
r
= 0.5
s, T
j
= 130C
At T
vj
= 130C. See note 1
At T
vj
= 130C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
30
1000
500
0.8
0.7
Min.
-
-
-
-
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.0
150
0.25
30
0.25
5
10
100
5
Units
V
mA
V
V
V
V
A
W
W
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MP03XXX330 Series
Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(Thyristor or diode with 50% V
RRM
at T
case
= 130C)
Fig. 5 Gate characteristics
100
10
1.0
0.1
0.01
0.001
Time - (s)
0.15
0
0.10
0.05
Thermal impedance - (
C/W)
d.c.
1600
1200
800
400
0
Instantaneous on-state current, I
T
- (A)
0.6
1.0
1.4
1.8
Instantaneous on-state voltage, V
T
- (V)
Measured under pulse conditions
T
j
= 125C
0.8
1.2
1.6
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2 3 45
50
ms
Cycles at 50Hz
Duration
150
200
250
300
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
350
400
450
500
100
10
1.0
0.1
0.001
0.1
0.01
0.1
10
T
j
= 125C
Gate trigger voltage, V
GT
- (V)
Gate trigger current, I
GT
- (A)
T
j
=
40
C
T
j
= 25C
Table gives pulse power P
GM
in Watts
Pulse Width
s
20
25
100
500
1ms
10ms
50
100
100
100
100
100
10
100
100
100
100
100
50
-
400
100
100
100
25
-
-
Frequency Hz
Upp
er limit 99%
Lower limit 1%
100
W
75W
50W
10W
5W
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MP03XXX330 Series
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 9 Maximum permissible case temperature vs on-state
current at specified conduction angles, sine wave 50/60Hz
Fig. 10 Maximum permissible case temperature vs on-state
current at specified conduction angles, square wave 50/60Hz
0
50
100
150
200
250
300
Mean on-state current, I
T(AV)
- (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180
120
90
60
30
450
500
350
0
50
100
150
200
250
300
Mean on-state current, I
T(AV)
- (A)
400
350
300
250
200
150
100
50
0
On-state power loss per device - (W)
180
120
90
60
30
450
500
350
400
d.c.
0
50
100
150
200
250
300
Mean on-state current, I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180
120
90
60
30
140
350
0
50
100
150
200
250
300
Mean on-state current, I
T(AV)
- (A)
120
100
80
60
40
20
0
Maximum permissible case temperature - (
C)
180
120
90
60
30
140
350
400
d.c.
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