MP04---590
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FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non Toxic) Isolation Medium
s
Integral Water Cooled Heatsink
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP04HBT590-18 or MP04HBT-16 or MP04HBT14
MP04HBP590-18 or MP04HBP-16 or MP04HBP14
MP04HBN590-18 or MP04HBN-16 or MP04HBN14
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
DRM
1800V
I
T(AV)
595A
I
TSM(per arm)
16800A
V
isol
3000V
MP04
XXX590
Dual Thyristor, Thyristor/Diode Module
Replaces April 2001 version, DS5371-2.2
DS5371-3.1 October 2001
1800
1600
1400
MP04XXX590-18
MP04XXX590-16
MP04XXX590-14
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Code
Circuit
HBT
HBP
HBN
Fig. 2 Electrical connections - (not to scale)
Fig.1 Circuit diagrams
Module type code: MP04.
For further information see Package Details.
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Test Conditions
Half wave resistive load
T
case
= 75C
T
case
= 85C
T
case
= 75C
8.3ms half sine, T
j
= 125C
V
R
= 0
8.3ms half sine, T
j
= 125C
V
R
= 50% V
DRM
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
kA
A
2
s
kA
A
2
s
V
Max.
595
505
935
16.8
1411 X 10
3
13.5
911 X 10
3
15.7
1232 X 10
3
12.6
794 X 10
3
3000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
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Test Conditions
dc
Half wave
3 Phase
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Parameter
Thermal resistance - junction to case
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.056
0.060
0.066
0.02
125
130
6 (35)
12 (106)
1580
Min.
-
-
-
-
-
40
-
-
-
Units
mA
V/
s
A/
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 1500A, gate source 1.5A,
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C. See note 1
At T
vj
= 125C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.85
0.38
Min.
-
-
-
-
-
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Sub-cycle surge curves
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, V
T
- (V)
0
500
1000
1500
2000
2500
Measured under
pulse conditions
Instantaneous on-state current, I
T
- (A)
T
j
= 125C Min
T
j
= 125C Max
0
5
10
15
20
25
30
35
40
1
4
8
10
Pulse length, half sine wave (ms)
Peak half sine on-state current - (kA)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
I
2
t value - (A
2
s x 10
6
)
2
3
5
6
7
9
I
TSM
(V
R
= 0)
I
TSM
(V
R
= 50% V
RRM
)
I
2
t (V
R
= 0)
I
2
t (V
R
= 50% V
RRM
)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
, T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
CURVES
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Fig. 7 Transient thermal impedance - dc
Fig. 6 Gate characteristics
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage, V
GT
- (V)
Region of
certain triggering
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse width
s
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
100W
50W
20W
10W
5W
Upp
er limit
99%
Lower
limit 99%
0
0.01
0.02
0.03
0.04
0.05
0.06
0.001
0.01
0.1
1
10
100
1000
Time - (Seconds)
Thermal resistance junction to case - (
C/W)
Fig. 5 Sub-cycle surge curves
0
2
4
6
8
10
12
14
16
18
0
10
20
30
40
50
60
Number of cycles @ 50Hz
Peak half sine wave on-state current - (kA)
Surge current (V
R
= 0)
Surge current (V
R
= 50% V
RRM
)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000
1200
Sine wave current (Average, per arm)
Power dissipation (Watts, per arm)
30
60
90
120
180
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