MP04---490
1/9
www.dynexsemi.com
Code
Circuit
HBT
HBP
HBN
FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non Toxic) Isolation Medium
s
Integral Water Cooled Heatsink
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP04HBT490-28 or MP04HBT490-26 or MP04HBT490-24
MP04HBP490-28 or MP04HBP490-26 or MP04HBP490-24
MP04HBN490-28 or MP04HBN490-26 or MP04HBN490-24
Note: When ordering, please use the whole part number.
KEY PARAMETERS
V
DRM
2800V
I
T(AV)
490A
I
TSM(per arm)
11250A
V
isol
3000V
MP04---490
Dual Thyristor, Thyristor/Diode Module
Advance Information
Replaces Jun3 2000 version, DS5204-1.2
DS5204-2.1 April 2001
Fig. 2 Electrical connections - (not to scale)
2800
2600
2400
MP04---490-28
MP04---490-26
MP04---490-24
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available.
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Fig.1 Circuit diagrams
Module type code: MP04.
For further information see Package Details.
MP04---490
2/9
www.dynexsemi.com
Test Conditions
Half wave resistive load
T
case
= 75C
T
case
= 85C
T
case
= 75C
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
490
420
770
11.25
633 x 10
3
9
506 x 10
3
3000
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Mounting torque = 5Nm
with mounting compound
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Parameter
Thermal resistance - junction to water
(per thyristor or diode)
Thermal resistance - case to heatsink
(per thyristor or diode)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Symbol
R
th(j-c)
R
th(c-hs)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.056
0.060
0.066
0.02
125
130
6 (35)
12 (106)
1580
Min.
-
-
-
-
-
40
-
-
-
MP04---490
3/9
www.dynexsemi.com
Units
mA
V/
s
A/
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 1500A, gate source 1.5A,
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C. See note 1
At T
vj
= 125C. See note 1
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.91
0.65
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
MP04---490
4/9
www.dynexsemi.com
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2
3 4 5
50
ms
Cycles at 50Hz
Duration
250
300
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
350
25
400
10
20 30
Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125C)
Fig. 5 Gate characteristics
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, V
T
- (V)
0
500
1000
1500
2000
2500
Instantaneous on-state current, I
T
- (A)
1
2
1: T
j
= 125C Min
2: T
j
= 125C Max
Measured under pulse
conditions
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage V
GT
- (V)
Region of certain
triggering
Upper limit 99%
Low
er limit 99%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse width
s
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
100
W
50W
20W
10W
5W
0
0.01
0.02
0.03
0.04
0.05
0.06
0.001
0.01
0.1
1
10
100
1000
Time - (Seconds)
Thermal resistance junction to case - (
C/W)
MP04---490
5/9
www.dynexsemi.com
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 9 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
square wave 50/60Hz
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
100
200 300
400
500
600
700
800
900 1000
Sine wave current (Average, per arm)
Power dissipation (Watts, per arm)
30
60
90
120
180
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000
1200
1400
Square wave current (Average, per arm) - (A)
Power dissipation (Watts, per arm)
30
60
90
120
180
DC
0
10
20
30
40
50
60
70
80
90
100
200
300
400
500
600
700
800
Sine wave current (Average, per arm)
Maximum permissble case temperature - (
C)
30
60
90
120
180
0
10
20
30
40
50
60
70
80
90
100 200 300 400 500 600 700 800 900 1000 1100 1200
Square wave current (Average, per arm)
Maximum permissible case temperature - (
C)
30
60
90
120
180
DC
MP04---490
6/9
www.dynexsemi.com
Fig. 11 50/60Hz single phase bridge DC output current vs
power loss and maximum permissible case temperature
Fig. 12 50/60Hz three phase bridge DC output current vs
power loss and maximum permissible case temperature
2500
3000
3500
4000
4500
5000
5500
6000
6500
4000
800
1000
1200
1400
1600
1800
2000
dc output current - (A)
T
otal power loss - (W)
0
10
20
30
40
50
60
70
80
90
Max permissible case temp. - (
C)
Power resistive load
Power inductive load
Temp resistive load
Temp inductive load
3500
4000
4500
5000
5500
6000
6500
7000
7500
9500
8000
8500
9000
1000
1200
1400
1600
1800
2000
dc output current - (A)
T
o
tal power loss - (W)
0
10
20
30
40
50
60
70
80
90
Max permissible case temp. - (
C)
Power resistive or inductive load
Temp resistive or inductive load
MP04---490
7/9
www.dynexsemi.com
Nominal weight: 1580g
Auxiliary gate/cathode leads not supplied as standard, but maybe purchased separately.
Module outline type code: MP04
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
MP04---490
8/9
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group provides support for those
customers requiring more than the basic semiconductor switch.
Using CAD design tools the group has developed a flexible
range of heatsink / clamping systems in line with advances in
device types and the voltage and current capability of Dynex
semiconductors.
An extensive range of air and liquid cooled assemblies is
available covering the range of circuit designs in general use
today.
HEATSINKS
The Power Assembly group has a proprietary range of extruded
aluminium heatsinks. These were designed to optimise the
performance of Dynex semiconductors. Data with respect to air
natural, forced air and liquid cooling (with flow rates) is available
on request.
For further information on device clamps, heatsinks and
assemblies, please contact your nearest sales representative or
customer service office.
MOUNTING RECOMMENDATIONS
Adequate heatsinking is required to maintain the base
temperature at 75
C if full rated current is to be achieved. Power
dissipation may be calculated by use of V
T(TO)
and r
T
information
in accordance with standard formulae. We can provide
assistance with calculations or choice of heatsink if required.
The heatsink surface must be smooth and flat; a surface finish
of N6 (32
in) and a flatness within 0.05mm (0.002") are
recommended.
Immediately prior to mounting, the heatsink surface should be
lightly scrubbed with fine emery, Scotch Brite or a mild chemical
etchant and then cleaned with a solvent to remove oxide build
up and foreign material. Care should be taken to ensure no
foreign particles remain.
An even coating of thermal compound (eg. Unial) should be
applied to both the heatsink and module mounting surfaces.
This should ideally be 0.05mm (0.002") per surface to ensure
optimum thermal performance.
After application of thermal compound, place the module
squarely over the mounting holes, (or `T' slots) in the heatsink.
Fit and finger tighten the recommended fixing bolts at each end.
Using a torque wrench, continue to tighten the fixing bolts by
rotating each bolt in turn no more than 1/4 of a revolution at a
time, until the required torque of 6Nm (55lbs.ins) is reached on
all bolts at both ends.
It is not acceptable to fully tighten one fixing bolt before starting
to tighten the others. Such action may DAMAGE the module.
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
PDF 
ZIP