MP04TT1550
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FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non Toxic) Isolation Medium
s
Integral Water Cooled Heatsink
APPLICATIONS
s
Welding
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP04TT1550-XX-W2
1/4 - 18 NPT connection
MP04TT1550-XX-W3
1/4 - 18 NPT connection
MP04TT1550-XX-W3A
1/4 - 18 NPT water connection
thread
XX shown in the part number about represents V
DRM
/100
selection required, eg. MP04TT1550-17-W2
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
DRM
1800V
I
LINE(cont.)
1438A
I
LINE(20cy./50%)
1670A
I
TSM(per arm)
14000A
V
isol
3000V
MP04TT1550
Dual Thyristor Water Cooled Welding Module
Preliminary Information
DS5467-1.1 June 2001
1800
1700
1600
1500
MP04TT1550-18
MP04TT1550-17
MP04TT1550-16
MP04TT1550-15
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
Fig. 1 TT Circuit diagram
Fig. 2 Module package variants - (not to scale)
Module outline type code: MP04-W2
(See Package Details for further information)
5 (G1)
6 (G2)
4 (K1)
7 (K2)
3 (A)
2 (A)
1 (AK)
Module outline type code:
MP04-W3
Module outline type code:
MP04-W3A
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Parameter
Max. controllable RMS line
current - single phase
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
Continuous 50/60Hz
T
water (in)
= 25C
4.5 Ltr/min
T
water (in)
= 40C
20 cycles, 50% duty cycle
T
water (in)
= 25C
4.5 Ltr/min
T
water (in)
= 40C
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
LINE
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
1438
1280
1860
1670
14
0.975X10
6
11.2
0.625X10
6
3000
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
-
Parameter
Thermal resistance - junction to water
(per thyristor)
Virtual junction temperature
Storage temperature range
Screw torque
Weight (nominal)
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM CURRENT RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
R
th(j-W)
T
vj
T
stg
-
-
Units
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
g
Max.
0.102
0.106
0.112
125
125
-
12(106)
Refer to
drawings
Min.
-
-
-
-
40
6(53)
-
-
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Units
mA
V/
s
A/
s
V
m
Test Conditions
At V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 500A, gate source 10V, 5
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.85
0.38
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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Fig. 3 Maximum (limit) on-state characteristics
Fig. 6 Transient thermal impedance - dc
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125C)
Fig. 5 Gate characteristics
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage V
T
- (V)
0
500
1000
1500
2000
2500
Measured under pulse
conditions
Instantaneous on-state current I
T
- (A)
1
2
1: T
j
= 125C Min
2: T
j
= 125C Max
20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2
3 4 5
50
ms
Cycles at 50Hz
Duration
400
500
I
2t
value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
600
700
25
10
20 30
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage, V
GT
- (V)
V
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse width
s
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
Upper limit 99%
100
W
50W
20W
10W
5W
Region of certain
triggering
Lower limit 99%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
0
0.02
0.04
0.06
0.08
0.1
0.12
0.001
0.01
0.1
1
10
100
1000
Time (Seconds)
Thermal resistance, Junction to water, R
th(j-w)
- (
C/W)
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Fig. 7 Single phase welding rating @T
water
= 25C
Fig. 10 Single phase welding rating @T
water
= 50C
Fig. 8 Single phase welding rating @T
water
= 30C
Fig. 9 Single phase welding rating @T
water
= 40C
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
1
10
100
Duty cycle - (%)
Rms line current - (A rms)
No. of cycles
1
3
5
10
20
30
50
100
T
j
= 100C, T
water
= 25C @ 4.5 Ltrs/min
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
1
10
100
Duty cycle - (%)
Rms line current - (A rms)
T
j
= 125C, T
water
= 30C @ 4.5 Ltrs/min
No. of cycles
1
3
5
10
20
30
50
100
0
1000
2000
3000
4000
5000
6000
7000
8000
1
10
100
Duty Cycle (%)
Rms line current - (A rms)
T
j
= 125C, T
water
= 40C @ 4.5 Ltrs/min
No. of cycles
1
3
5
10
20
30
50
100
0
1000
2000
3000
4000
5000
6000
7000
1
10
100
Duty Cycle (%)
Rms line current - (A rms)
T
j
= 125C, T
water
= 50C @ 4.5 Ltrs/min
No. of cycles
1
3
5
10
20
30
50
100
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