MP04TT500
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FEATURES
s
Dual Device Module
s
Electrically Isolated Package
s
Pressure Contact Construction
s
International Standard Footprint
s
Alumina (Non Toxic) Isolation Medium
s
Integral Water Cooled Heatsink
APPLICATIONS
s
Motor Control
s
Controlled Rectifier Bridges
s
Heater Control
s
AC Phase Control
VOLTAGE RATINGS
ORDERING INFORMATION
Order As:
MP04TT500-XX-W2
1/4 - 18 NPT connection
MP04TT500-XX-W3
1/4 - 18 NPT connection
MP04TT500-XX-W3A
1/4 - 18 NPT water connection
thread
XX shown in the part number about represents V
DRM
/100
selection required, eg. MP04TT500-27-W2
Note: When ordering, please use the complete part number.
KEY PARAMETERS
V
DRM
2800V
I
T(AV)(per arm)
480A
I
TSM(per arm)
11200A
I
T(RMS)(per arm)
753A
V
isol
3000V
MP04TT500
Dual Thyristor Water Cooled Module
Advance Information
DS5446-1.2 May 2001
Fig. 1 TT Circuit diagram
Fig. 2 Module package variants - (not to scale)
Module outline type code: MP04-W2
(See Package Details for further information)
2800
2700
2600
2500
MP04TT500-28
MP04TT500-27
MP04TT500-26
MP04TT500-25
Conditions
T
vj
= 0 to 125C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Lower voltage grades available
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
5 (G1)
6 (G2)
4 (K1)
7 (K2)
3 (A)
2 (A)
1 (AK)
Module outline type code:
MP04-W3
Module outline type code:
MP04-W3A
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Parameter
Mean on-state current
RMS value
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
Test Conditions
Half wave resistive load,
T
water (in)
= 25C
4.5 Ltr/min
T
water (in)
= 40C
T
water (in)
= 25C @ 4.5 Ltr/min
T
water (in)
= 40C @ 4.5 Ltr/min
10ms half sine, T
j
= 125C
V
R
= 0
10ms half sine, T
j
= 125C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Symbol
I
T(AV)
I
T(RMS
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Units
A
A
A
A
kA
A
2
s
kA
A
2
s
V
Max.
540
480
845
753
11.25
633 x 10
3
9
506 x 10
3
3000
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
Reverse (blocking)
-
Mounting - M6
Electrical connections - M10
Parameter
Thermal resistance - junction to water
(per thyristor)
Virtual junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
R
th(j-w)
T
vj
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
Nm (lb.ins)
Nm (lb.ins)
Max.
0.102
0.106
0.112
125
125
-
12 (106)
Min.
-
-
-
-
40
6 (53)
-
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Units
mA
V/
s
A/
s
V
m
Test Conditions
t V
RRM
/V
DRM
, T
j
= 125C
To 67% V
DRM
, T
j
= 125C
From 67% V
DRM
to 500A, gate source 10V, 5
t
r
= 0.5
s, T
j
= 125C
At T
vj
= 125C
At T
vj
= 125C
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage. (See note 1)
On-state slope resistance. (See note 1)
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
V
T(TO)
r
T
Max.
50
1000
500
0.91
0.65
Min.
-
-
-
-
-
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
GATE TRIGGER CHARACTERISTICS AND RATINGS
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
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20
15
10
5
0
Peak half sine wave on-state current - (kA)
1
10
1
2
3 4 5
50
ms
Cycles at 50Hz
Duration
250
300
I
2
t value - (A
2
s x 10
3
)
I
2
t
I
2
t =
2
x t
2
350
25
400
10
20 30
Fig. 6 Transient thermal impedance - dc
Fig. 3 Maximum (limit) on-state characteristics
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125C)
Fig. 5 Gate characteristics
0.5
1.0
1.5
2.0
2.5
Instantaneous on-state voltage, V
T
- (V)
0
500
1000
1500
2000
2500
Instantaneous on-state current, I
T
- (A)
1
2
1: T
j
= 125C Min
2: T
j
= 125C Max
Measured under pulse
conditions
10
1
0.1
0.01
0.001
Gate trigger current, I
GT
- (A)
100
10
1
0.1
Gate trigger voltage V
GT
- (V)
Region of certain
triggering
Upper limit 99%
Lower limit 99%
T
j
= 125
C
T
j
= 25
C
T
j
= -40
C
V
GD
I
FGM
Table gives pulse power P
GM
in Watts
Pulse width
s
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
100
-
400
150
125
100
25
-
100W
50W
20W
10W
5W
0
0.02
0.04
0.06
0.08
0.1
0.12
0.001
0.01
0.1
1
10
100
1000
Time (Seconds)
Thermal resistance, Junction to water, R
th(j-w)
- (
C/W)
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Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
Fig. 9 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
square wave 50/60Hz
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
100
200
300
400
500
600
700
800
900 1000
Sine wave current (Average, per arm)
Power dissipation (Watts, per arm)
30
60
90
120
180
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0
200
400
600
800
1000
1200
1400
Square wave current (Average, per arm)
Power dissipation (Watts, per arm)
30
60
90
120
180
DC
0
10
20
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
Sine wave current (Average, per arm)
Maximum permissble inlet water temperature - (
C)
30
60
90
120
180
0
10
20
30
40
50
60
70
80
90
100
0
100
200
300
400
500
600
700
800
Square wave current (Average, per arm)
Maximum permissible water inlet temperature - (
C)
30
60
90
120
180
DC
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