Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Linear Integrated Systems
SD-SST211/213/215
N-CHANNEL LATERAL
DMOS SWITCH
ZENER PROTECTED
Product Summary
Features
Benefits
Applications
Ultra-High Speed Switching--
tON
: 1 ns
High-Speed System Performance
Fast Analog Switch
Ultra-Low Reverse Capacitance: 0.2 pF
Low Insertion Loss at High Frequencies
Fast Sample-and-Holds
Low Guaranteed
rDS
@5 V
Low Transfer Signal Loss
Pixel-Rate Switching
Low Turn-On Threshold Voltage
Simple Driver Requirement
DAC Deglitchers
N-Channel Enhancement Mode
Single Supply Operation
High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching in audio,
video, and high-frequency applications. The SD211 may be used
for
5-V analog switching or as a high speed driver of the SD214.
The SD214 is normally used for
10-V analog switching. These
MOSFETs utilize lateral construction to achieve low capacitance
and ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
For similar products see: quad array--SD5000/5400 series, and
non-Zener protection--SD210DE/214DE.
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Absolute Maximum Ratings (T
A
= 25
0
C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage (SD211DE/SST211) ................... -30/25 V
(SD213DE/SST213) .................. -15/25 V
(SD215DE/SST215) .................. -25/30 V
Gate-Substrate Voltage
a
(SD211DE/SST211 ................... -0.3/25 V
(SD213DE/SST213) ................. -0.3/25 V
(SD215DE/SST215) ................. -0.3/30 V
Drain-Source Voltage
(SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Source-Drain Voltage
(SD211DE/SST21) ........................... 10 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Drain-Substrate Voltage
(SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Source-Substrate Voltage
(SD211DE/SST211) .......................... 15 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16" from case for 10 seconds) ............................. 300
0
C
Storage Temperature .................................................................... -65 to 150
0
C
Operating Junction Temperature ................................................. -55 to 125
0
C
Power Dissipation
a
....................................................................................................................................
300 mW
Notes:
a. Derate 3 mW/
0
C above 25
0
C
Specifications
a
Linear Integrated Systems
4042 Clipper Court Fremont, CA 94538 Tel: 510 490-9160 Fax: 510 353-0261
Specifications
a
Notes:
a. T
A
= 25
0
C unless otherwise noted.
b. B is the body (substrate) and V
(BR)
is breakdown.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
PDF 
ZIP