.
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TA329..Q
APPLICATIONS
s
High Frequency Applications
s
High Power Choppers And Inverters
s
Welding
s
Ultrasonic Generators
s
Induction Heating
s
400Hz UPS
s
PWM Inverters
FEATURES
s
Low Loss Asymmetrical Diffusion Structure
s
High Interdigitated Amplifying Gate
s
Gate Assisted Turn-off With Exclusive Bypass Diode
s
Fully Characterised For Operation up to 40kHz
s
Directly Compatible With 220-480 A.c. Mains
VOLTAGE RATINGS
KEY PARAMETERS
V
DRM
1400V
I
T(RMS)
370A
I
TSM
2000A
dVdt
1000V/
s
dI/dt
1000A/
s
t
q
7.0
s
1400
1200
1000
TA329 14 Q
TA329 12 Q
TA329 10 Q
Repetitive Peak
Reverse Voltage
V
RRM
V
10
10
10
Lower voltage grades available.
Type Number
Repetitive Peak
Off-state Voltage
V
DRM
V
Outline type code: MU86.
See Package Details for further information.
TA329..Q
Asymmetric Thyristor
Advance Information
Replaces January 2000 version, DS4680-3.0
DS4680-3.1 July 2002
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TA329..Q
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
0.153
Anode dc
Clamping force 4.0kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.02
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
3.6
4.4
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.04
o
C/W
o
C/W
Cathode dc
-
0.204
o
C/W
Double side cooled
-
0.085
o
C/W
CURRENT AND SURGE RATINGS
Symbol
Parameter
Conditions
Double Side Cooled
I
T(RMS)
RMS value
I
TSM
Surge (non-repetitive) on-state current
I
2
t
I
2
t for fusing
Units
Max.
Half sine wave, duty cycle 50%, T
case
= 80
o
C,
T
j
= 125C.
370
A
T
j
= 125
o
C, t
p
= 1ms, V
R
= 0
2000
A
t
p
10ms
20 x 10
3
A
2
s
.
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TA329..Q
GATE TRIGGER CHARACTERISTICS AND RATINGS
V
DWM
= 12V, R
L
= 3
, T
case
= 25
o
C
Typ.
Max.
Units
Conditions
Parameter
Symbol
V
GT
Gate trigger voltage
V
DWM
= 12V, R
L
= 3
, T
case
= 25
o
C
I
GT
Gate trigger current
-
4
V
-
250
mA
V
RGM
Peak reverse gate voltage
I
FGM
Peak forward gate current
-
P
GM
Peak gate power
-
-
7
V
-
10
A
-
50
W
-
15
W
-
-
P
G(AV)
Average gate power
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 600A peak, T
case
= 125
o
C
I
RRM
Peak reverse current
At V
RRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
5
s.
dV/dt
Maximum linear rate of rise of off-state voltage
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.5
V
-
30
mA
-
1000
V/
s
-
1000
A/
s
Rate of rise of on-state current
dI/dt
t
q
Max. gate assisted turn-off time
(with feedback diode)
T
j
= 125
o
C, I
T(PK)
= 200A,
t
p
= 25
s (half sine wave),
V
R
= DF451 Diode voltage drop,
dV/dt = 600V/
s (linear to 60% V
DRM
),
V
GK
= -5V
7
-
s
I
DRM
Off-state current
At V
DRM
, T
case
= 125
o
C
-
1
mA
Non-repetitive
-
500
A/
s
Repetitive
t
q
Max. turn-off time
(with feedback diode)
T
j
= 125
o
C, I
TM
= 100A,
t
p
> 100
s, dI
R
/dt = 30A/
s, V
R
= 1V,
dV/dt = 600V/
s (linear to 60% V
DRM
),
Gate open.
10
-
s
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TA329..Q
CURVES
Fig.1 Energy per pulse for sinusoidal pulses.
Notes:
1. VD
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1
F, R = 33
.
4. Double side cooled.
Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65C.
Notes:
1. VD
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1
F, R = 33
.
4. Double side cooled.
.
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TA329..Q
Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90C.
Notes:
1. VD
600V.
2. VR = DF451 Diode voltage drop.
3. R.C. snubber. C = 0.1
F, R = 33
.
4. Double side cooled.
Fig.4 Energy per pulse for trapezoidal pulses
Notes:
1. dI/dt = 100A/
s.
2. VD
600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1
F, R = 33
.
5. Double side cooled.
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TA329..Q
Fig.5 Maximum allowable peak on-state current vs pulse width for Tcase = 65C.
Notes:
1. dI/dt = 100A/
s.
2. VD
600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1
F, R = 33
.
5. Double side cooled.
Fig.6 Maximum allowable peak on-state current vs pulse width for Tcase = 90C.
Notes:
1. dI/dt = 100A/
s.
2. VD
600V.
3. VR = DF451 Diode voltage drop.
4. R.C. snubber. C = 0.1
F, R = 33
.
5. Double side cooled.
.
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TA329..Q
Fig.7 Maximum on-state conduction characteristic
Fig.8 Non-repetitive sub-cycle surge on-state current and I
2
t rating.
Fig.9 Typical variation of effective turn-off time (t
q
)
with negative gate bias.
Fig.10 Reverse gate characteristics
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TA329..Q
Fig.11 Gate trigger characteristics
Fig.12 Transient thermal impedance - junction to case
.
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TA329..Q
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
15.0
14.0
6.3
Cathode tab
Gate
1.5
19nom
2 holes 3.6 x 2.0 deep
(in both electrodes)
Cathode
Anode
19nom
42 max
38 max
Nominal weight: 50g
Clamping force: 3.5kN
10%
Lead length: 250mm
Package outine type code: MU86
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TA329..Q
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of `T' 23mm and `E' 30mm
discs, and bar clamps right up to 83kN for our `Z' 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522
500020
North America: Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 Publication No. DS4680-3 Issue No. 3.1 July 2002
TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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