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TFA41..L
APPLICATIONS
s
High Power Inverters And Choppers
s
UPS
s
Railway Traction
s
Induction Heating
s
AC Motor Drives
s
Cycloconverters
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
High Voltage
VOLTAGE RATINGS
KEY PARAMETERS
V
DRM
2400V
I
T(RMS)
2100A
I
TSM
25000A
dV/dt
300V/
s
dI/dt
400A/
s
t
q
100
s
Conditions
V
RSM
= V
RRM
+ 100V
I
DRM
= I
RRM
= 100mA
at V
RRM
or V
DRM
& T
vj
Repetitive
Peak
Voltages
V
DRM
V
RRM
Type Number
2400
2200
2000
1800
1600
1400
Lower voltage grades available.
TFA41 24L
TFA41 22L
TFA41 20L
TFA41 18L
TFA41 16L
TFA41 14L
Outline type code: MU140
See Package Details for further information.
CURRENT RATINGS
Parameter
Conditions
Max.
Units
Mean on-state current
RMS value
Half sinewave, 50Hz, T
case
= 80
o
C
Half sinewave, 50Hz, T
case
= 80
o
C
1330
2100
A
A
Symbol
I
T(AV)
I
T(RMS)
TFA41..L
Fast Switching Thyristor
Replaces January 2000 version, DS4282-4.0
DS4282-4.1 July 2002
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TFA41..L
SURGE RATINGS
Parameter
Conditions
Max.
Units
I
2
t for fusing
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
25.0
kA
A
2
s
Surge (non-repetitive) on-state current
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
Symbol
I
TSM
I
2
t
3125 x 10
3
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
-
Anode dc
Clamping force 44kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.003
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
41.8
46.2
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.006
o
C/W
o
C/W
Cathode dc
-
-
o
C/W
Double side cooled
-
0.015
o
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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TFA41..L
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 2000A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
0.5
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
1.7
V
-
100
mA
-
300
V/
s
Repetitive 50Hz
-
400
A/
s
Non-repetitive
-
-
A/
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.2
-
V
-
0.28
m
Delay time
t
gd
1.5*
-
s
Total turn-on time
t
(ON)TOT
3*
-
s
T
j
= 25C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt = 50A/
s, dI
G
/dt = 1A/
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
100*
-
mA
T
j
= 125C, I
T
= 250A, V
R
= 100V,
dV/dt = 20V/
s to 60% V
DRM
,
dI
R
/dt = 50A/
s.
Turn-off time
t
q
100
-
s
t
q
code: L
GATE TRIGGER CHARACTERISTICS AND RATINGS
I
L
Latching current
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
300*
-
mA
Reverse recovery charge
Q
RR
-
-
C
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.25
Typ.
mA
V
V
GD
Gate trigger voltage
250
V
GT
I
GT
Gate trigger current
At V
DRM
T
case
= 125
o
C
V
DRM
= 12V, T
case
= 25
o
C
V
DRM
= 12V, T
case
= 25
o
C
-
-
-
V
30
0.25
V
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
-
-
10
I
FGM
Peak forward gate current
Peak forward gate voltage
V
FGM
V
FGN
Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
-
-
50
3.0
W
W
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages
and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today.
The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to
optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow
rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or
Customer Services.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901.
Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
Dynex Semiconductor 2002 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN
UNITED KINGDOM
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: +44-(0)1522-500500
Fax: +44-(0)1522-500550
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded
as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company
reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee
that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure
that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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