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1
LT1336
Half-Bridge N-Channel
Power MOSFET Driver
with Boost Regulator
s
Floating Top Driver Switches Up to 60V
s
Internal Boost Regulator for DC Operation
s
Drives Gate of Top N-Channel MOSFET
above Supply
s
180ns Transition Times Driving 10,000pF
s
Adaptive Nonoverlapping Gate Drives Prevent
Shoot-Through
s
Top Drive Maintained at High Duty Cycles
s
TTL/CMOS Input Levels
s
Undervoltage Lockout with Hysteresis
s
Operates at Supply Voltages from 10V to 15V
s
Separate Top and Bottom Drive Pins
The LT
1336 is a cost effective half-bridge N-channel
power MOSFET driver. The floating driver can drive the
topside N-channel power MOSFETs operating off a high
voltage (HV) rail of up to 60V (absolute maximum). In
PWM operation an on-chip switching regulator maintains
charge in the bootstrap capacitor even when approaching
and operating at 100% duty cycle.
The internal logic prevents the inputs from turning on the
power MOSFETs in a half-bridge at the same time. Its
unique adaptive protection against shoot-through cur-
rents eliminates all matching requirements for the two
MOSFETs. This greatly eases the design of high efficiency
motor control and switching regulator systems.
During low supply or start-up conditions, the undervoltage
lockout actively pulls the driver outputs low to prevent the
power MOSFETs from being partially turned on. The 0.5V
hysteresis allows reliable operation even with slowly vary-
ing supplies.
FEATURES
DESCRIPTIO
N
U
s
PWM of High Current Inductive Loads
s
Half-Bridge and Full-Bridge Motor Control
s
Synchronous Step-Down Switching Regulators
s
3-Phase Brushless Motor Drive
s
High Current Transducer Drivers
s
Class D Power Amplifiers
APPLICATIO
N
S
U
, LTC and LT are registered trademarks of Linear Technology Corporation.
TYPICAL APPLICATIO
N
U
+
+
+
SV
+
PV
+
UVOUT
INTOP
INBOTTOM
16
14
13
12
11
9
8
1
2
10
5
3
4
SWITCH
BOOST
TGATEDR
TGATEFB
TSOURCE
BGATEDR
BGATEFB
LT1336
I
SENSE
1N4148
200
H*
HV = 40V MAX**
C
BOOST
1
F
10
F
25V
12V
PWM
0Hz TO 100kHz
1336 TA01
IRFZ44
IRFZ44
6
15
7
1000
F
100V
SGND
PGND
SWGND
1N4148
R
SENSE
2
1/4W
*SUMIDA RCR-664D-221KC
**FOR HV > 40V SEE "DERIVING THE FLOATING
SUPPLY WITH THE FLYBACK TOPOLOGY" IN
APPLICATIONS INFORMATION SECTION
INTOP INBOTTOM TGATEDR
BGATEDR
L
L
L
L
L
H
L
H
H
L
H
L
H
H
L
L
2
LT1336
ABSOLUTE
M
AXI
M
U
M
RATINGS
W
W
W
U
Supply Voltage (Pins 2, 10) .................................... 20V
Boost Voltage ......................................................... 75V
Peak Output Currents (< 10
s) .............................. 1.5A
Input Pin Voltages .......................... 0.3V to V
+
+ 0.3V
Top Source Voltage ..................................... 5V to 60V
Boost-to-Source Voltage
(V
BOOST
V
TSOURCE
) ............................ 0.3V to 20V
Switch Voltage (Pin 16) ............................ 0.3V to 60V
Operating Temperature Range
Commercial ............................................ 0
C to 70
C
Industrial ........................................... 40
C to 85
C
Junction Temperature (Note 1)............................ 125
C
Storage Temperature Range ................ 65
C to 150
C
Lead Temperature (Soldering, 10 sec)................. 300
C
PACKAGE/ORDER I
N
FOR
M
ATIO
N
W
U
U
ORDER PART
NUMBER
LT1336CN
LT1336CS
LT1336IN
LT1336IS
1
2
3
4
5
6
7
8
TOP VIEW
N PACKAGE
16-LEAD PDIP
16
15
14
13
12
11
10
9
I
SENSE
SV
+
INTOP
INBOTTOM
UVOUT
SGND
PGND
BGATEFB
SWITCH
SWGND
BOOST
TGATEDR
TGATEFB
TSOURCE
PV
+
BGATEDR
S PACKAGE
16-LEAD PLASTIC SO NARROW
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
I
S
DC Supply Current (Note 2)
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 2V
12
15
20
mA
V
+
= 15V, V
INTOP
= 2V, V
INBOTTOM
= 0.8V
12
14
20
mA
V
+
= 15V, V
INTOP
= 0.8V, V
INBOTTOM
= 0.8V
12
15
20
mA
V
+
= 15V, V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
=
30
40
mA
0.8V (Note 3)
I
BOOST
Boost Current (Note 2)
V
+
= 15V, V
TSOURCE
= 60V, V
BOOST
= 75V,
3
5
7
mA
V
INTOP
= V
INBOTTOM
= 0.8V
V
IL
Input Logic Low
q
1.4
0.8
V
V
IH
Input Logic High
q
2
1.7
V
I
IN
Input Current
V
INTOP
= V
INBOTTOM
= 4V
q
7
25
A
V
+
UVH
V
+
Undervoltage Start-Up Threshold
8.4
8.9
9.4
V
V
+
UVL
V
+
Undervoltage Shutdown Threshold
7.8
8.3
8.8
V
V
BUVH
V
BOOST
Undervoltage Start-Up Threshold
V
TSOURCE
= 60V, V
BOOST
V
TSOURCE
8.8
9.3
9.8
V
V
BUVL
V
BOOST
Undervoltage Shutdown Threshold
V
TSOURCE
= 60V, V
BOOST
V
TSOURCE
8.2
8.7
9.2
V
I
UVOUT
Undervoltage Output Leakage
V
+
= 15V
q
0.1
5
A
V
UVOUT
Undervoltage Output Saturation
V
+
= 7.5V, I
UVOUT
= 2.5mA
q
0.2
0.4
V
V
OH
Top Gate ON Voltage
V
INTOP
= 2V, V
INBOTTOM
= 0.8V,
q
11
11.3
12
V
V
TGATE DR
V
TSOURCE
Bottom Gate ON Voltage
V
INTOP
= 0.8V, V
INBOTTOM
= 2V, V
BGATE DR
q
11
11.3
12
V
V
OL
Top Gate OFF Voltage
V
INTOP
= 0.8V, V
INBOTTOM
= 2V,
q
0.4
0.7
V
V
TGATE DR
V
TSOURCE
Bottom Gate OFF Voltage
V
INTOP
= 2V, V
INBOTTOM
= 0.8V, V
BGATE DR
q
0.4
0.7
V
T
JMAX
= 125
C,
JA
= 70
C/ W (N)
T
JMAX
= 125
C,
JA
= 110
C/ W (S)
Consult factory for Military grade parts.
Test Circuit, T
A
= 25
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V and Pins 1, 16
open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
3
LT1336
V
IS
I
SENSE
Peak Current Threshold
V
TSOURCE
= 60V, V
BOOST
= 68V, V
+
V
ISENSE
310
480
650
mV
V
ISHYS
I
SENSE
Hysteresis
V
TSOURCE
= 60V, V
BOOST
= 68V
25
55
85
mV
V
SAT
Switch Saturation Voltage
V
ISENSE
= V
+
, V
BOOST
V
TSOURCE
= 9V,
q
0.85
1.2
V
I
SW
= 100mA
V
BOUT
V
BOOST
Regulated Output
V
TSOURCE
= 40V, V
INTOP
= V
INBOTTOM
= 0.8V,
10
10.6
11.2
V
I
BOOST
= 10mA, V
BOOST
V
TSOURCE
t
r
Top Gate Rise Time
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
q
130
200
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Rise Time
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
q
90
200
ns
Measured at V
BGATE DR
(Note 4)
t
f
Top Gate Fall Time
V
INTOP
() Transition, V
INBOTTOM
= 0.8V,
q
60
140
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Fall Time
V
INBOTTOM
() Transition, V
INTOP
= 0.8V,
q
60
140
ns
Measured at V
BGATE DR
(Note 4)
t
D1
Top Gate Turn-On Delay
V
INTOP
(+) Transition, V
INBOTTOM
= 0.8V,
q
250
500
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Turn-On Delay
V
INBOTTOM
(+) Transition, V
INTOP
= 0.8V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
t
D2
Top Gate Turn-Off Delay
V
INTOP
() Transition, V
INBOTTOM
= 0.8V,
q
300
600
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Turn-Off Delay
V
INBOTTOM
() Transition, V
INTOP
= 0.8V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
t
D3
Top Gate Lockout Delay
V
INBOTTOM
(+) Transition, V
INTOP
= 2V,
q
300
600
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Lockout Delay
V
INTOP
(+) Transition, V
INBOTTOM
= 2V,
q
250
500
ns
Measured at V
BGATE DR
(Note 4)
t
D4
Top Gate Release Delay
V
INBOTTOM
() Transition, V
INTOP
= 2V,
q
250
500
ns
Measured at V
TGATE DR
V
TSOURCE
(Note 4)
Bottom Gate Release Delay
V
INTOP
() Transition, V
INBOTTOM
= 2V,
q
200
400
ns
Measured at V
BGATE DR
(Note 4)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
ELECTRICAL CHARACTERISTICS
Test Circuit, T
A
= 25
C, V
+
= V
BOOST
= 12V, V
TSOURCE
= 0V, and Pins 1, 16
open. Gate Feedback pins connected to Gate Drive pins unless otherwise specified.
The
q
denotes specifications which apply over the full operating
temperature range.
Note 1: T
J
is calculated from the ambient temperature T
A
and power
dissipation P
D
according to the following formulas:
LT1336CN/LT1336IN: T
J
= T
A
+ (P
D
)(70
C/ W)
LT1336CS/LT1336IS: T
J
= T
A
+ (P
D
)(110
C/ W)
Note 2: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See Typical Performance
Characteristics and Applications Information sections.
Note 3: Pins 1 and 16 connected to each end of the inductor. Booster is
free running.
Note 4: See Timing Diagram. Gate rise times are measured from 2V to 10V
and fall times are measured from 10V to 2V. Delay times are measured
from the input transition to when the gate voltage has risen to 2V or
decreased to 10V.
4
LT1336
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
DC Supply Current
vs Supply Voltage
SUPPLY VOLTAGE (V)
4
SUPPLY CURRENT (mA)
16
22
20
18
16
14
12
10
8
6
1336 G01
8
6
10
12
14
20
18
BOTH INPUTS
HIGH OR LOW
V
TSOURCE
= 0V
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
DC + Dynamic Supply Current
vs Input Frequency
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10
100
1000
1336 G03
V
+
= 20V
50% DUTY CYCLE
C
GATE
= 3000pF
V
+
= 15V
V
+
= 10V
DC Supply Current
vs Top Source Voltage
TOP SOURCE VOLTAGE (V)
0
SUPPLY CURRENT (mA)
30
34
31
28
25
22
19
16
13
10
1336 G18
10
5
15
20
25
40
35
BOTH INPUTS
HIGH OR LOW
V
+
= 12V
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
INTOP
= LOW
V
INBOTTOM
= HIGH
DC Supply Current
vs Temperature
TEMPERATURE (
C)
50
SUPPLY CURRENT (mA)
100
18
17
16
15
14
13
12
11
10
9
1336 G02
0
25
25
50
75
125
BOTH INPUTS
HIGH OR LOW
V
INTOP
= HIGH
V
INBOTTOM
= LOW
V
+
= 12V
V
TSOURCE
= 0V
V
INTOP
= LOW
V
INBOTTOM
= HIGH
INPUT FREQUENCY (kHz)
1
SUPPLY CURRENT (mA)
60
50
40
30
20
10
0
10
100
1000
1336 G04
C
GATE
= 10000pF
C
GATE
= 1000pF
50% DUTY CYCLE
V
+
= 12V
C
GATE
= 3000pF
DC + Dynamic Supply Current
vs Input Frequency
TEMPERATURE (
C)
50
SUPPLY VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1336 G05
0
25
25
50
75
125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
Undervoltage Lockout (V
+
)
TEMPERATURE (
C)
50
INPUT CURRENT (
A)
14
13
12
11
10
9
8
7
6
5
4
0
50
75
1336 G08
25
25
100
125
V
+
= 12V
V
IN
= 4V
Top or Bottom Input Pin Current
vs Temperature
Input Threshold Voltage
vs Temperature
TEMPERATURE (
C)
50
INPUT THRESHOLD VOLTAGE (V)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1336 G07
0
25
25
50
75
125
V
LOW
V
HIGH
V
+
= 12V
TEMPERATURE (
C)
50
V
BOOST
V
TSOURCE
VOLTAGE (V)
100
13
12
11
10
9
8
7
6
5
4
1336 G06
0
25
25
50
75
125
SHUTDOWN THRESHOLD
START-UP THRESHOLD
V
TSOURCE
= 60V
Undervoltage Lockout (V
BOOST
)
5
LT1336
TYPICAL PERFOR
M
A
N
CE CHARACTERISTICS
U
W
TEMPERATURE (
C)
50
TURN-ON DELAY TIME (ns)
100
400
350
300
250
200
150
100
1336 G14
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-On Delay Time
vs Temperature
Top Gate Rise Time
vs Temperature
TEMPERATURE (
C)
50
BOTTOM GATE RISE TIME (ns)
100
230
210
190
170
150
130
110
90
70
50
1336 G10
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
C
LOAD
= 1000pF
V
+
= 12V
TEMPERATURE (
C)
50
BOTTOM GATE FALL TIME (ns)
100
210
190
170
150
130
110
90
70
50
30
1336 G11
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
Bottom Gate Fall Time
vs Temperature
INPUT VOLTAGE (V)
4
INPUT CURRENT (mA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
8
9
1336 G09
5
6
7
10
11
12
V
+
= 12V
Top or Bottom Input Pin Current
vs Input Voltage
Bottom Gate Rise Time
vs Temperature
Top Gate Fall Time
vs Temperature
TEMPERATURE (
C)
50
TOP GATE FALL TIME (ns)
100
1336 G13
0
50
180
160
140
120
100
80
60
40
20
25
25
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
TEMPERATURE (
C)
50
TOP GATE RISE TIME (ns)
100
300
280
260
240
220
200
180
160
140
120
100
80
1336 G12
0
25
25
50
75
125
C
LOAD
= 10000pF
C
LOAD
= 3000pF
V
+
= 12V
C
LOAD
= 1000pF
TEMPERATURE (
C)
50
TURN-OFF DELAY TIME (ns)
100
400
350
300
250
200
150
100
1336 G15
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Turn-Off Delay Time
vs Temperature
TEMPERATURE (
C)
50
LOCKOUT DELAY TIME (ns)
100
400
350
300
250
200
150
100
1336 G16
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Lockout Delay Time
vs Temperature
TEMPERATURE (
C)
50
RELEASE DELAY TIME (ns)
100
400
350
300
250
200
150
100
1336 G17
0
25
25
50
75
125
BOTTOM DRIVER
TOP DRIVER
V
+
= 12V
C
LOAD
= 3000pF
Release Delay Time
vs Temperature
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