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Электронный компонент: RH1014M

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1
RH1014M
Quad Precision
Operational Amplifier
A
U
G
W
A
W
U
W
A
R
BSOLUTE
XI
TI
S
The RH1014M is the first precision quad operational
amplifier which directly upgrades designs in the industry
standard 8-pin DIP LM124/LM148/OP-11/5156 pin con-
figuration. Low offset voltage (300V max), low drift
( 2.5V/C), low offset current ( 1.5nA), and high gain
(1.2 million min) combine to make the RH1014M four truly
precision amplifers in one package.
The wafer lots are processed to Linear Technology's in-
house Class S flow to yield circuits usable in stringent
military applications.
D
U
ESCRIPTIO
Supply Voltage ..................................................... 22V
Differential Input Voltage ...................................... 30V
Input Voltage .............. Equal to Positive Supply Voltage
................................. 5V Below Negative Supply Voltage
Output Short-Circuit Duration ......................... Indefinite
Operating Temperature Range .............. 55C to 125C
Storage Temperature Range ................. 65C to 150C
Lead Temperature (Soldering, 10 sec).................. 300C
, LTC and LT are registered trademarks of Linear Technology Corporation.
BUR -I CIRCUIT
U
U
PACKAGE I FOR ATIO
U
U
W
RH1014M
20V
20V
50k
100
50k
RH1014M BI
1
2
3
4
5
6
7
TOP VIEW
J PACKAGE
14-LEAD CERAMIC DIP
14
13
12
11
10
9
8
OUT A
IN A
+IN A
V
+
+IN B
IN B
OUT B
OUT D
IN D
+IN D
V
+IN C
IN C
OUT C
TOP VIEW
OUT A
IN A
+IN A
V
+
+IN B
IN B
OUT B
OUT D
IN D
+IN D
V
+
+IN C
IN C
OUT C
14
13
12
11
10
9
8
1
2
3
4
5
6
7
WB PACKAGE
14-LEAD FLATPAK METAL SEALED
BOTTOM BRAZED
2
RH1014M
(Pre-Irradiation)
TABLE 1: ELECTRICAL CHARACTERISTICS
55C T
A
125C
V
S
= 15V, V
CM
= 0V, unless otherwise noted.
T
A
= 25C
SUB-
SUB-
SYMBOL PARAMETER
CONDITIONS
NOTES
MIN
TYP
MAX
GROUP
MIN
TYP
MAX
GROUP
UNITS
V
OS
Input Offset Voltage
300
1
550
2,3
V
2
450
1
V
V
CM
= 0.1V
2
750
2
V
V
OS
Average Tempco of Offset
1
2.5
V/C
Temp
Voltage
V
OS
Long Term V
OS
Stability
0.5
V/Mo
Time
I
OS
Input Offset Current
10
1
20
2,3
nA
2
10
1
20
2,3
nA
I
B
Input Bias Current
30
1
45
2,3
nA
2
50
1
120
2,3
nA
e
n
Input Noise Voltage
0.1Hz to 10Hz
0.55
V
P-P
Input Noise Voltage
f
O
= 10Hz
24
nV/ Hz
Density
f
O
= 1000Hz
22
nV/ Hz
i
n
Input Noise Current
f
O
= 10Hz
0.07
pA/ Hz
Density
R
IN
Input Resistance
Differential
1
70
M
Common Mode
4
G
A
VOL
Large-Signal Voltage Gain
V
O
= 10V, R
L
2k
1.2
4
0.25
5,6
V/V
V
O
= 10V, R
L
600
0.5
4
V/V
V
O
= 5mV to 4V, R
L
= 500
2
1
V/V
Input Voltage Range
1
13.5
V
1
15.0
V
1,2
3.5
V
1,2
0
V
CMRR
Common-Mode Rejection
V
CM
= 13.5V, 15V
97
1
dB
Ratio
V
CM
= 13V, 14.9V
94
2,3
dB
PSRR
Power Supply Rejection
V
S
= 2V to 18V
100
1
97
2,3
dB
Ratio
Channel Separation
V
O
= 10V, R
L
= 2k
120
1
dB
V
OUT
Output Voltage Swing
R
L
2k
12.5
4
11.5
5,6
V
Output Low, No Load
2
25
4
mV
Output Low, 600 to GND
2
10
4
18
5,6
mV
Output Low, I
SINK
= 1mA
2
350
4
mV
Output High, No Load
2
4.0
4
V
Output High, 600 to GND
2
3.4
4
3.1
5,6
V
SR
Slew Rate
0.2
4
V/s
I
S
Supply Current
Per Amplifier
0.55
1
0.70
2,3
mA
2
0.50
1
0.65
2,3
mA
3
RH1014M
SYMBOL PARAMETER
CONDITIONS
NOTES MIN
MAX
MIN
MAX MIN
MAX
MIN
MAX
MIN
MAX UNITS
V
OS
Input Offset Voltage
450
450
600
750
900
V
2
600
600
750
900
V
I
OS
Input Offset Current
10
10
15
20
25
nA
2
10
10
15
20
nA
I
B
Input Bias Current
60
75
100
175
250
nA
2
80
100
125
200
nA
Input Voltage Range
1
13.5
13.5
13.5
13.5
13.5
V
1
15.0
15.0
15.0
15.0
15.0
V
2
3.5
3.5
3.5
3.5
V
2
0
0
0
0
V
CMRR
Common-Mode Rejection
V
CM
= 13V, 15V
97
97
94
90
86
dB
Ratio
PSRR
Power Supply Rejection
V
S
= 10V to 18V
100
98
94
86
80
dB
Ratio
A
VOL
Large-Signal Voltage Gain
R
L
10k, V
O
= 10V
500
200
100
50
25
V/mV
V
OUT
Maximum Output Voltage
R
L
10k
12.5
12.5
12.5
12.5
12.5
V
Swing
Output Low, No Load
2
25
30
40
50
mV
Output Low, 600 to GND
2
10
10
10
10
mV
Output Low, I
SINK
= 1mA
2
0.6
0.8
1.0
1.6
V
Output High, No Load
2
4.0
4.0
4.0
4.0
V
Output High, 600 to GND
2
3.4
3.2
3.0
2.8
V
SR
Slew Rate
R
L
10k
0.13
0.12
0.11
0.07
0.01
V/s
I
S
Supply Current
Per Amplifier
0.55
0.55
0.55
0.55
0.55
mA
2
0.50
0.50
0.50
0.50
mA
V
S
= 15V, V
CM
= 0V, T
A
= 25C, unless otherwise noted.
TABLE 1A: ELECTRICAL CHARACTERISTICS
(Post-Irradiation) (Note 3)
200KRAD(Si)
100KRAD(Si)
50KRAD(Si)
20KRAD(Si)
10KRAD(Si)
Note 1: Guaranteed by design, characterization, or correlation to other
tested parameters..
Note 2: Specification applies for V
S
+
= 5V, V
S
= 0V, V
CM
= 0V,
V
OUT
= 1.4V.
4
RH1014M
MIL-STD-883 TEST REQUIREMENTS
SUBGROUP
Final Electrical Test Requirements (Method 5004)
1*,2,3,4,5,6
Group A Test Requirements (Method 5005)
1,2,3,4,5,6
Group B and D for Class S, and
1,2,3
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
* PDA applies to subgroup 1. See PDA Test Notes.
TABLE 2: ELECTRICAL TEST REQUIRE E TS
UW
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in
that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
Negative Slew Rate
Positive Slew Rate
C
C
HARA TERISTICS
U
W
A
TYPICAL PERFOR
CE
TOTAL DOSE KRAD (Si)
1
NEGATIVE SLEW RATE (V/
s)
0.8
0.6
0.4
0.2
0
10
100
1000
RH1014M G03
V
S
= 15V
R
L
= 10k
TOTAL DOSE KRAD (Si)
1
POSITIVE SLEW RATE (V/
s)
0.8
0.6
0.4
0.2
0
10
100
1000
RH1014M G02
V
S
= 15V
R
L
= 10k
TOTAL DOSE KRAD (Si)
1
SUPPLY CURRENT (mA)
0.8
0.6
0.4
0.2
0
10
100
1000
RH1014M G01
V
S
= 15V
R
L
= 10k
Supply Current (Per Amplifier)
15V
15V
10k
8V
RH1014M TDBC
+
10k
5
RH1014M
C
C
HARA TERISTICS
U
W
A
TYPICAL PERFOR
CE
Power Supply Rejection Ratio
TOTAL DOSE KRAD (Si)
1
POWER SUPPLY REJECTION RATIO (dB)
140
130
120
110
100
90
80
70
10
100
1000
RH1014M G09
V
S
= 10V TO 18V
TOTAL DOSE KRAD (Si)
1
INPUT NOISE VOLTAGE DENSITY (nV/
Hz)
100
90
80
70
60
50
40
30
20
10
0
10
100
1000
RH1014M G10
V
S
= 15V
f
O
= 10Hz
Input Noise Voltage Density
TOTAL DOSE KRAD (Si)
1
GAIN BANDWIDTH PRODUCT (kHz)
1000
900
800
700
600
500
400
300
200
100
0
10
100
1000
RH1014M G11
V
S
= 5V
R
L
= 10k
Gain Bandwidth Product
Open-Loop Gain
TOTAL DOSE KRAD (Si)
1
OPEN-LOOP GAIN (dB)
150
140
130
120
110
100
90
80
10
100
1000
RH1014M G07
V
S
= 15V
R
L
= 10k
V
OUT
= 10V
TOTAL DOSE KRAD (Si)
1
INPUT OFFSET VOLTAGE (
V)
300
200
100
0
100
200
300
10
100
1000
RH1014M G04
V
S
= 15V
V
CM
= 0V
Input Offset Voltage
Input Offset Current
TOTAL DOSE KRAD (Si)
1
INPUT OFFSET CURRENT (nA)
3
2
1
0
1
2
10
100
1000
RH1014M G06
V
S
= 15V
V
CM
= 0V
Input Bias Current
TOTAL DOSE KRAD (Si)
1
INPUT BIAS CURRENT (nA)
70
60
50
40
30
20
10
0
10
100
1000
RH1014M G05
V
S
= 15V
V
CM
= 0V
TOTAL DOSE KRAD (Si)
1
COMMON-MODE REJECTION RATIO (dB)
150
140
130
120
110
100
90
80
10
100
1000
RH1014M G08
V
S
= 15V
15V
V
CM
13.5V
Common-Mode Rejection Ratio