MBR4030PT thru 4060PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position : Any
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MBR
4030PT
30
21
30
Maximum Average Forward
Rectified Current (See Fig.1)
@T
C
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Forward
Voltage (Note 1)
40
400
0.70
0.60
0.80
0.75
T
J
Operating Temperature Range
-55 to +150
C
T
STG
Storage Temperature Range
-55 to +175
C
Typical Thermal Resistance (Note 2)
1.4
C/W
T
J
=25 C
C
J
Typical Junction Capacitance
per element (Note 3)
700
pF
I
R
@T
J
=125 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
100
mA
A
A
V
UNIT
V
V
CHARACTERISTICS
SYMBOL
Voltage Rate of Change (Rated VR)
T
J
=125 C
R
0JC
dv/dt
10000
V/us
I
F
=20A @
I
F
=20A @
I
F
=40A @
I
F
=40A @
MBR
4035PT
35
24.5
35
MBR
4040PT
40
28
40
MBR
4045PT
45
31.5
45
MBR
4050PT
50
35
50
MBR
4060PT
60
42
60
V
0.80
0.70
-
-
1.0
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 40 Amperes
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Thermal Resistance Junction to Case.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
T
J
=25 C
T
J
=125 C
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KTH11
RATING AND CHARACTERISTIC CURVES
MBR4030PT thru MBR4060PT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
SURG
E
CURRENT
,
AM
PERES
1
5
10
50
100
2
20
100
200
300
400
FIG.1 - FORWARD CURRENT DERATING CURVE
AV
ER
AG
E F
O
R
W
AR
D
C
U
RR
EN
T
A
M
P
E
R
E
S
25
75
100
125
150
10
0
50
40
175
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
30
0
20
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
URRENT
,(
A)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
0.9
PULSE WIDTH 300ua
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
T
J
= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
I
N
ST
AN
T
A
NE
O
U
S
R
E
V
E
R
S
E
CURRE
NT
,
(
mA
)
20
40
120
140
0
0.001
0.1
10
1.0
60
80
100
0.01
T
J
= 125 C
T
J
= 25 C
T
J
= 75 C
MBR4030PT~ MBR4045PT
MBR4050PT ~ MBR4060PT
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CA
PA
CIT
A
N
C
E
,
(
p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
10000
1000
100
T
J
= 25 C, f= 1MHz
0.1
CASE TEMPERATURE , C
0
4
REV. 2, 01-Dec-2000, KTH11
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