NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1.0A,recovery to 0.25A.
3.Thermal Resistance Junction to Case.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
MURB1610CT thru 1620CT
FEATURES
Glass passivated chip
Superfast switching time for high efficiency
Low forward voltage drop and high current capability
Low reverse leakage current
High surge capacity
Plastic package has UL flammability classification
94V-0
MECHANICAL DATA
Case : D PAK molded plastic
Polarity : As marked on the body
Weight : 0.06 ounces, 1.7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MURB1610CT
100
70
100
Maximum Average Forward
Rectified Current
@T
C
=125 C
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 8.0A DC
16
100
0.975
C
T
J
,T
STG
Operating and Storage Temperature Range
-55 to +150
Typical Thermal Resistance (Note 3)
R
0JC
3.0
C/W
C
J
Typical Junction Capacitance
per element (Note 1)
85
pF
I
R
@T
J
=150 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 C
5
250
uA
V
A
A
V
UNIT
V
V
MURB1620CT
200
140
200
2
CHARACTERISTICS
SYMBOL
Maximum Reverse Recovery Time (Note 2)
T
RR
25
ns
D PAK
2
All Dimensions in millimeter
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
9.65
10.69
15.88
14.60
8.25
9.25
1.40
1.14
0.51
1.14
2.29
2.79
2.29
2.79
1.14
2.92
K
J
I
1.40
2.03
0.64
0.30
4.37
4.83
D PAK
2
K
J
I
H
F
D
C
A
G
E
B
PIN 1
PIN 2
K
HEATSINK
1
2
K
K
SUPER FAST
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE - 100 to 200 Volts
FORWARD CURRENT - 16 Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KTGB01
RATING AND CHARACTERISTIC CURVES
MURB1610CT thru MURB1620CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
SUR
G
E
CURRENT
,
AM
PERES
1
5
10
50
100
2
20
0
25
50
75
100
125
150
Single Half-Sine-Wave
(JEDEC METHOD)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACI
T
ANCE , (p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
CURRENT
,
(
A)
0.5
0.6
1.0
1.1
1.0
10
100
0.7
0.8
0.9
0.1
1.3
1.2
T
J
= 25 C
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
I
N
ST
ANT
A
NEO
U
S
R
EVER
SE C
U
R
R
E
N
T
,
(
m
A
)
20
40
120
0
0.01
1.0
10
1000
100
60
80
100
0.1
T
J
= 25 C
PULSE WIDTH 300us
140
T
J
= 125 C
T
J
= 150 C
0.4
T
J
= 100 C
T
J
= 150 C
4
0
T
J
= 25 C, f= 1MHz
FIG.1 - FORWARD CURRENT DERATING CURVE
A
V
E
R
A
G
E
F
O
R
W
AR
D
CU
RR
EN
T
A
M
P
E
R
E
S
75
100
125
150
4
0
50
16
175
12
0
8
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , C
25
REV. 2, 01-Dec-2000, KTGB01
PDF 
ZIP