MicroCapacitance (MC) SIDACtor Device
http://www.littelfuse.com
2 - 18
2004 Littelfuse, Inc.
+1 972-580-7777
SIDACtor
Data Book and Design Guide
MicroCapacitance (MC) SIDACtor Device
The TO-92 MC SIDACtor series is intended for applications sensitive to load values.
Typically, high speed connections require a lower capacitance. C
O
values for MC devices
are 40% lower than a standard EC part.
This MC SIDACtor series is used to enable equipment to meet various regulatory
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.
* For surge ratings, see table below.
General Notes:
All measurements are made at an ambient temperature of 25 C. I
PP
applies to -40 C through +85 C temperature range.
I
PP
is a repetitive surge rating and is guaranteed for the life of the product.
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
V
DRM
is measured at I
DRM.
V
S
is measured at 100 V/s.
Special voltage (V
S
and V
DRM
) and holding current (I
H
) requirements are available upon request.
Off-state capacitance (C
O
) is measured at 1 MHz with a 2 V bias.
Electrical Parameters
Part
Number *
V
DRM
Volts
V
S
Volts
V
T
Volts
I
DRM
Amps
I
S
mAmps
I
T
Amps
I
H
mAmps
C
O
pF
P0640EC MC
58
77
4
5
800
2.2
150
60
P1500EC MC
140
180
4
5
800
2.2
150
50
P2600EC MC
220
300
4
5
800
2.2
150
40
P3100EC MC
275
350
4
5
800
2.2
150
40
Surge Ratings
Series
I
PP
2x10 s
Amps
I
PP
8x20 s
Amps
I
PP
10x160 s
Amps
I
PP
10x560 s
Amps
I
PP
10x1000 s
Amps
I
TSM
60 Hz
Amps
di/dt
Amps/s
C
500
400
200
150
100
50
500
MicroCapacitance (MC) SIDACtor Device
2004 Littelfuse, Inc.
2 - 19
http://www.littelfuse.com
SIDACtor
Data Book and Design Guide
+1 972-580-7777
D
a
ta
S
h
e
e
ts
Thermal Considerations
Package
Symbol
Parameter
Value
Unit
TO-92
T
J
Operating Junction Temperature Range
-40 to +150
C
T
S
Storage Temperature Range
-65 to +150
C
R
JA
Thermal Resistance: Junction to Ambient
90
C/W
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
I
H
I
T
I
S
I
DRM
V
DRM
V
T
+V
-V
+I
-I
V
S
V-I Characteristics
50
100
0
t
r
t
d
0
Peak
Value
Half Value
t Time (s)
I
PP
P
e
ak Pulse Current %I
PP
t
r
= rise time to peak value
t
d
= decay time to half value
Waveform = t
r
x t
d
t
r
x t
d
Pulse Wave-form
-8
-40 -20
0
20
40 60
80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) C
P
ercent of
V
S
Change %
25 C
Normalized V
S
Change versus Junction Temperature
0.4
-40 -20
0
20 40 60 80 100 120 140 160
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Case Temperature (T
C
) C
Ratio of
I
H
I
H
(T
C
= 25 C)
25 C
Normalized DC Holding Current versus Case Temperature
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