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Электронный компонент: P4SMA56CA

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Silicon Avalanche Diodes
258
w w w . l i t t e l f u s e . c o m
400W Surface Mount Transient Voltage Supressors
P4SMA Series
FEATURES
RoHS
compliant
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low Inductance
Excellent clamping capability
Repetition Rate (duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
V(BR) for unidirectional types
Typical IR less than 1A above 10V
High temperature soldering: 250C/10 seconds at terminals
DEVICES FOR BIPOLAR APPLICATION
For Bidirectional use Suffix CA for types P4SMA6.8CA thru types
P4SMA550CA
Electrical characteristics apply in both directions
MAXIMUM RATINGS AND CHARACTERISTICS
@25C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000s waveform (Note 1.2,FIG.1)
Peak pulse current of on 10/1000s
waveform (Note 1, FIG.3)
Peak Forward Surge Current,
8.3ms Single Half Sine-Wave
Superimposed on Rated Load,
(JEDEC Method)(Note2,3)
Operating junction and Storage
Temperature Range
VALUE
Min
400
See Table 1
40
-55 to +150
UNIT
Watts
Amps
Amps
C
Notes:
1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25C per Fig.2
2. Mounted on 5.0mm
2
(0.03mm thick) Copper Pads to each
terminal
3. 8.3ms single half sine-wave, or equivalent square wave,
Duty cycle = 4 pulses per minutes maximum
SYMBOL
PPPM
IPPM
IFSM
Tj, TsTG
Mechanical Specifications:
Weight:
0.002 ounce, 0.061 gram
Case:
JEDEC DO214AC. Molded plastic over
glass passivated junction
Mounting Position:
Any
Polarity:
Color band denoted positive end
(cathode) except Bidirectional
Terminal:
Solder plated, solderable per MIL-STD-
750, Method 2026
Standard Packaging:
12mm tape (EIA STD RS-481)
Agency Approvals:
Recognized under the Components Program
of Underwriters Laboratories.
Agency File Numbers
:
E128667
P4SMA
C A
Voltage
Bi-Directional
5% Voltage
T = Tape and reeled (5000pcs)
Tolerance
ORDERING INFORMATION
RoHS
Silicon Avalanche Diodes
259
w w w . l i t t e l f u s e . c o m
6
SILICON DIODE
ARRA
YS
400W Surface Mount Transient Voltage Supressors
Part
Number
(Uni)
Part
Number
(Bi)
Device Marking
Code
Breakdown
Voltage
V
BR
(Volts) @ I
T
Maximum
Reverse
Leakage
I
R
@ V
R
(A)
Maximum
Clamping
Voltage
V
C
@ I
PP
(Volts)
Maximum
Peak Pulse
Current
I
PP
(A)
ELECTRICAL SPECIFICATION @ Tamb 25C
P4SMA6.8A
P4SMA6.8CA
6V8A 6V8C 5.80
6.45 7.14
10
10.5
39.0
1000
P4SMA7.5A
P4SMA7.5CA
7V5A 7V5C 6.40
7.13 7.88
10
11.3
36.3
500
P4SMA8.2A
P4SMA8.2CA
8V2A 8V2C 7.02
7.79 8.61
10
12.1
33.9
200
P4SMA9.1A
P4SMA9.1CA
9V1A 9V1C 7.78
8.65 9.55
1
13.4
30.6
50
P4SMA10A
P4SMA10CA
10A 10C 8.55
9.50 10.50 1
14.5
28.3
10
P4SMA11A
P4SMA11CA
11A 11C 9.40
10.50
11.60 1
15.6
26.3
5
P4SMA12A
P4SMA12CA
12A 12C 10.20 11.40
12.60 1
16.7
24.6
5
P4SMA13A
P4SMA13CA
13A 13C 11.10 12.40
13.70 1
18.2
22.5
5
P4SMA15A
P4SMA15CA
15A 15C 12.80 14.30
15.80 1
21.2
19.3
5
P4SMA16A
P4SMA16CA
16A 16C 13.60 15.20
16.80 1
22.5
18.2
5
P4SMA18A
P4SMA18CA
18A 18C 15.30 17.10
18.90 1
25.5
16.1
5
P4SMA20A
P4SMA20CA
20A 20C 17.10 19.00
21.00 1
27.7
14.8
5
P4SMA22A
P4SMA22CA
22A 22C 18.80 20.90
23.10 1
30.6
13.4
5
P4SMA24A
P4SMA24CA
24A 24C 20.50 22.80
25.20 1
33.2
12.3
5
P4SMA27A
P4SMA27CA
27A 27C 23.10 25.70
28.40 1
37.5
10.9
5
P4SMA30A
P4SMA30CA
30A 30C 25.60 28.50
31.50 1
41.4
9.9
5
P4SMA33A
P4SMA33CA
33A 33C 28.20 31.40
34.70 1
45.7
9.0
5
P4SMA36A
P4SMA36CA
36A 36C 30.80 34.20
37.80 1
49.9
8.2
5
P4SMA39A
P4SMA39CA
39A 39C 33.30 37.10
41.00 1
53.9
7.6
5
P4SMA43A
P4SMA43CA
43A 43C 36.80 40.90
45.20 1
59.3
6.9
5
P4SMA47A
P4SMA47CA
47A 47C 40.20 44.70
49.40 1
64.8
6.3
5
P4SMA51A
P4SMA51CA
51A 51C 43.60 48.50
53.60 1
70.1
5.8
5
P4SMA56A
P4SMA56CA
56A 56C 47.80 53.20
58.80 1
77.0
5.3
5
P4SMA62A
P4SMA62CA
62A 62C 53.00 58.90
65.10 1
85.0
4.8
5
P4SMA68A
P4SMA68CA
68A 68C 58.10 64.60
71.40 1
92.0
4.5
5
P4SMA75A
P4SMA75CA
75A 75C 64.10 71.30
78.80 1
103.0
4.0
5
P4SMA82A
P4SMA82CA
82A 82C 70.10 77.90
86.10 1
113.0
3.6
5
P4SMA91A
P4SMA91CA
91A 91C 77.80 86.50
95.50 1
125.0
3.3
5
P4SMA100A
P4SMA100CA
100A 100C 85.50
95.00 105.00 1
137.0
3.0
5
P4SMA110A
P4SMA110CA
110A 110C 94.00
105.00
116.00 1
152.0
2.7
5
P4SMA120A
P4SMA120CA
120A 120C 102.00 114.00
126.00 1
165.0
2.5
5
P4SMA130A
P4SMA130CA
130A 130C 111.00 124.00
137.00 1
179.0
2.3
5
P4SMA150A
P4SMA150CA
150A 150C 128.00 143.00
158.00 1
207.0
2.0
5
P4SMA160A
P4SMA160CA
160A 160C 136.00 152.00
168.00 1
219.0
1.9
5
P4SMA170A
P4SMA170CA
170A 170C 145.00 162.00
179.00 1
234.0
1.8
5
P4SMA180A
P4SMA180CA
180A 180C 154.00 171.00
189.00 1
246.0
1.7
5
P4SMA200A
P4SMA200CA
200A 200C 171.00 190.00
210.00 1
274.0
1.5
5
P4SMA220A
P4SMA220CA
220A 220C 185.00 209.00
231.00 1
328.0
1.3
5
P4SMA250A
P4SMA250CA
250A 250C 214.00 237.00
263.00 1
344.0
1.2
5
P4SMA300A
P4SMA300CA
300A 300C 256.00 285.00
315.00 1
414.0
1.0
5
P4SMA350A
P4SMA350CA
350A 350C 300.00 332.00
368.00 1
482.0
0.9
5
P4SMA400A
P4SMA400CA
400A 400C 342.00 380.00
420.00 1
548.0
0.8
5
P4SMA440A
P4SMA440CA
440A 440C 376.00 418.00
462.00 1
602.0
0.7
5
P4SMA480A
P4SMA480CA
480A 480C 408.00 456.00
504.00 1
658.0
0.6
5
P4SMA510A
P4SMA510CA
510A 510C 434.00 485.00
535.00 1
698.0
0.6
5
P4SMA530A
P4SMA530CA
530A 530C 477.00 503.50
556.50 1
725.0
0.6
5
P4SMA540A
P4SMA540CA
540A 540C 459.00 513.00
567.00 1
740.0
0.5
5
P4SMA550A
P4SMA550CA
550A 550C 495.00 522.50
577.50 1
760.0
0.5
5
Reverse
Stand off
Voltage
V
R
(Volts)
UNI
BI
MIN
MAX
For bidirectional type having Vrwm of 10 volts and less, the IR limit is double.
The avaliable parts are "A" type only, the parts without A (VBR is 10%) is not avaliable.
Test
Current
I
T
(mA)
P4SMA Series
RoHS
Silicon Avalanche Diodes
260
w w w . l i t t e l f u s e . c o m
Fig. 1 Peak Pulse Power Rating
Fig. 3 Pulse Waveform
Fig. 5- Typ. Transient Thermal Impedance
Fig. 6- Maximum Non-Repetitive Peak
Fig. 4- Typical Junction Capacitance
Fig. 2 Pulse Derating Curve
td- Pulse Width (sec.)
TA- Ambient Temperature (C)
P
PPM
- Peak Pulse Power (KW)
I PPM
- Peak Pulse Current, % I
RSM
Transient Thermal Impedance
(

C/W)
I PSM
-Peak Forward Surge Current (A)
C
J-Junction Capacitance (pF)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0.1s
1.0s
10s
100s
1.0ms
10ms
0.1
1
10
100
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
0
0
0
0.1
1.0
10
100
50
100
150
1.0
2.0
3.0
4.0
0.001
0.01
0.1
1
10
100
1000
1
10
100
50
200
20000
10000
1000
100
10
1.0
10
100
200
10
5
100
0
25
25
50
50
75
75
100
100
125 150 175 200
tp- Pulse Duration(sec)
Number of Cycles at 60Hz
VWM-Reverse Stand-Off Voltage (V)
Forward Surge Current
Uni-Directional Only
tr=10sec
Peak Value
IPPM
P4SMA6.8-
P4SMA91A
P4SMA100A-
P4SMA170A
Half Value IPPM
2
TJ=25C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000sec. Waveform
as defined by R.E.A
td
TJ=TJ max.
8.3 Single Half Sine-Wave
(JEDEC Method)
Uni-Directional
Bi-Directional
TJ=25C
f=1.0MHZ
Vsig=50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Non-repetitive pulse
waveform shown in
Fig.3 T
A
= 25C
Uni-Directional
Bi-Directional
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
400W Surface Mount Transient Voltage Supressors
P4SMA Series
RoHS
Ratings and Characteristic Curves TA=25C unless otherwise noted
Silicon Avalanche Diodes
261
w w w . l i t t e l f u s e . c o m
6
SILICON DIODE
ARRA
YS
400W Surface Mount Transient Voltage Supressors
P4SMA Series
RoHS
DO-214AC (SMA)
0.177 (4.50)
0.157(3.99)
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.208 (5.28)
0.194 (4.93)
0.090 (2.29)
0.078 (1.98)
0.008 (0.203) MAX
Dimensions in inches and (millimeters)
Cathode Band
Package Outline Dimensions and Pad Layouts