LESHAN RADIO COMPANY, LTD.
BAS70-04LT11/2
Dual Series
Schottky Barrier Diode
BAS70-04LT1
1
3
2
CASE 31808, STYLE 11
SOT23 (TO236AB)
* 70V SCHOTTKY BARRIER DIODES
3
CATHODE/ANODE
ANODE
1
CATHODE
2
These Schottky barrier diodes are designed
for high speed switching applications, circuit
protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Min-
iature surface mount package is excellent for
hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage -- 0.75 Volts (Typ)
@ I
F
= 10 mAdc
MAXIMUM RATINGS
(T
J
= 150C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Volts
Forward Power Dissipation
P
F
@ T
A
= 25C
225
mW
Derate above 25C
1.8
mW/C
Operating Junction and Storage
T
J
, T
stg
55 to +150
C
Temperature Range
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (I
R
= 10
A)
V
(BR)R
70
--
Volts
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz) C
T
-- 2.0 pF
Reverse Leakage (V
R
= 50 V) I
R
-- 0.1
Adc
(V
R
= 70V)
--
10
Forward Voltage (I
F
= 1.0 mAdc)
V
F
--
410
mVdc
Forward Voltage (I
F
= 10 mAdc)
V
F
--
750
mVdc
Forward Voltage (I
F
= 15 mAdc)
V
F
--
1.0
Vdc
LESHAN RADIO COMPANY, LTD.
BAS70-04LT12/2
BAS7004LT1
100
10
1.0
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
F
, FORW
ARD CURRENT (mA)
100
10
1.0
0.1
0.01
0.001
0
5.0
10
15
20
25
30
35
40
45
50
V
R
, REVERSE VOLTAGE (V)
Figure 2. Reverse Current Versus Reverse Voltage
I
R
, REVERSE CURRENT
(
A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5.0
10
15
20
25
30
35
40
45
50
C
T
, CAP
ACIT
ANCE (pF)
V
F
, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Current
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Current
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