LESHAN RADIO COMPANY, LTD.
BB1321/2
VHF Variable Capacitance
Diode
SOD 323
1
2
BB132
P2
MARKING DIAGRAM
2
ANODE
1
CATHODE
FEATURES
High linearity
Excellent matching to 1% DMA
Very small plastic SMD package
C28: 2.5 pF; ratio: 26.
APPLICATIONS
Electronic tuning in VHF television
tuners, band A up to 160 MHz
VCO.
DESCRIPTION
The BB132 is a variable capacitance
diode fabricated in planar technology, and
encapsulated in the SOD323 very small
plastic SMD package.
The excellent matching performance is
achieved by gliding matching and a direct
matching assembly procedure.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
30
V
I
F
continuous forward current
20
mA
T
stg
storage temperature
55
+150
C
T
j
operating junction temperature
55
+125
C
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
I
R
reverse current
V
R
= 30 V; see Fig.2
10
nA
V
R
= 30 V; T
j
= 85 C; see Fig.2
200
nA
r
s
diode series resistance
f = 100 MHz; note 1
2
C
d
diode capacitance
V
R
= 0.5 V; f = 1 MHz; see Figs 1 and 3
60
75
pF
V
R
= 28 V;f = 1 MHz; see Figs 1 and 3
2.3
2.75
pF
C
d( 0.5V )
capacitance ratio
f = 1 MHz
24
30
C
d (28V )
capacitance matching
V
R
= 0.5 to 28 V; in a sequence of 4 diodes
1
%
C
d
(gliding)
C
d
V
R
= 0.5 to 28 V; in a sequence of 15 diodes
2
%
(gliding)
Note
1. V
R
is the value at which C
d
= 30 pF.
LESHAN RADIO COMPANY, LTD.
BB1322/2
BB132
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Reverse current as a function of junction
temperature; maximum values.
Fig.3 Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
T
j
C.
V
R
(V).
f = 1 MHz; T
j
= 25 C
.
T
j
= 0 to 85 C
.
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