LESHAN RADIO COMPANY, LTD.
BB1811/2
VHF variable capacitance diode
SOD523 SC-79
1
2
BB 181
2
ANODE
1
CATHODE
FEATURES
Excellent linearity
Ultra small plastic SMD package
C28: 1 pF; ratio: 14.
APPLICATIONS
Electronic tuning in satellite tuners
Tuneable coupling
Voltage controlled oscillators (VCO).
DESCRIPTION
The BB181 is a variable capacitance diode, fabricated in planar technology and
encapsulated in the SOD523 (SC-79) ultra small plastic SMD package.
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
30
V
I
F
continuous forward current
20
mA
T
stg
storage temperature
55
+150
C
T
j
operating junction temperature
55
+150
C
ELECTRICAL CHARACTERISTICS T
j
=25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
R
reverse current
V
R
= 30 V; see Fig.2
10
nA
V
R
=30 V; Tj =85C; see Fig.2
200
nA
r
s
diode series resistance
f = 470 MHz; note 1
3
C
d
diode capacitance
V
R
= 0.5 V; f = 1 MHz; see Figs 1 and 3
8
17
pF
V
R
= 28 V; f = 1 MHz; see Figs 1 and 3
0.7
1.055
pF
C
d(0.5V)
C
d(28V )
capacitance ratio
f = 1 MHz
12
16
Note
1. V
R
is the value at which Cd = 9 pF.
MARKING CODE:N
N
1
2
LESHAN RADIO COMPANY, LTD.
BB1812/2
BB 181
15
10
5
0
10
1
1
10
10
2
V
R
( V )
C
d
( pF )
10
3
10
4
10
5
10
1
1
10
10
2
V
R
( V )
TC
d
( K
-1
)
10
3
10
2
10
0
50
100
T
j
( C )
I
R
(nA)
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Reverse current as a function of junction
temperature; maximum values.
Fig.3 Temperature coefficient of diode capacitance as a function of
reverse voltage; typical values.
f = 1 MHz; T
j
=25C
T
j
= 0 to 85 C.
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