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Электронный компонент: L2SC3837LT1

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LESHAN RADIO COMPANY, LTD.
L2SC3837LT1 1/2
High-Frequency Amplifier
Transistor
Features
1.High transition frequency.(Typ.f
T
=1.5GHz)
2.Small rbb`Cc and high gain.(Typ.6ps)
3.Small NF.
L2SC3837LT1
MAXIMUM RATINGS (T
A
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CEO
18
V
Emitter-base voltage
V
EBO
3
V
Collector Current
I
C
50
mA
Collector power dissipation
P
C
0.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~+150
C
ELECTRICAL CHARACTERISTICS(T
A
= 25
C)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Collector-base breakdown voltage
BV
CBO
30
-
-
V
I
C
=10
A
Collector-emitter breakdown voltage
BV
CEO
18
-
-
V
I
C
=1mA
Emitter-base breakdown voltage
BV
EBO
3
-
-
V
I
E
=10
A
Collector cutoff current
I
CBO
-
-
0.5
A
V
CB
=10V
Emitter cutoff current
I
EBO
-
-
0.5
A
V
EB
= 2 V
Collector-emitter saturation voltage
V
CE(sat)
-
-
0.5
V
I
C
/I
B
=20mA/4mA
DC current transfer ratio
h
FE
56
-
180
-
V
CE
/I
C
=10V/10mA
Transition frequency
f
T
600
1500
-
MHz
V
CB
=10V, I
C
=10mA, f=200MHz
Output capacitance
Cob
-
0.9
1.5
pF
V
CB
=10V, I
E
=0A, f=1MHz
Collector-base time constant
rbb`Cc
-
6
13
ps
V
CB
=10V, I
C
=10mA, f=31.8MHz
Noise factor
NF
-
4.5
-
dB
V
CE
=12V, I
C
=2mA, f=200MHz,Rg=50
DEVICE MARKING
L2SC3837LT1=AP
1
BASE
2
EMITTER
COLLECTOR
3
1
2
3
LESHAN RADIO COMPANY, LTD.
L2SC3837LT1 2/2
L2SC3837LT1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
D
J
K
L
A
C
B S
H
G
V
1
2
3
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8