LESHAN RADIO COMPANY, LTD.
1
3
2
SC-59
L2SC3838QT1
L2SC3838QT1-1/2
Absolute maximum ratings (Ta=25
o
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
T
stg
Limits
2
0
1
1
3
50
0.2
150
- 55~+150
Unit
V
V
V
mA
W
o
C
o
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
o
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
Cob
rbb'Cc
NF
2
0
1
1
3
120
1.4 3.2
0.
8
0.5
0.5
270
1.5
V
V
V
uA
u
A
G
Hz
pF
I
C
= 10A
I
C
= 1mA
I
E
= 10A
V
CB
= 10
V,I
E
=0
V
EB
= 2
V,I
C
=0
V
CE(sat)
0.5
V
I
C
/I
B
=
1
0mA/
5
mA
V
CE
/I
C
= 10V/
5
mA
V
CB
= 10V , I
C
= 10mA , f =
5
00MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
V
CB
= 10V , I
C
= 10mA , f = 31.8MHz
V
CE
=
6
V , I
C
= 2mA , f =
5
00MHz , Rg
= 50
3
.5
dB
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Collector-base time constant
Noise factor
Device Marking
L2SC3838QT1=R25
j
ps
4
12
High-Frequency Amplifier
NPN Transistor
L
3838QT1
3.2
2
EMITTER
3
COLLECTOR
1
BASE
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