LESHAN RADIO COMPANY, LTD.
SOT-723
L2SC5658M3T5G
L2SC5658M3T5G-1/4
1
2
3
General Purpose Amplifier
NPN Silicon Transistor
This NPN transistor is designed for general purpose amplifier
applications. This device is housed in the SOT-723 package which is
designed for low power surface mount applications, where board
space is at a premium.
Reduces Board Space
High h
FE
, 210 -460 (typical)
Low V
CE(sat)
, < 0.5 V
ESD Performance: Human Body Model;
u 2000 V,
Machine Model;
u 200 V
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
This is a Pb-Free Device
MAXIMUM RATINGS
(T
A
= 25
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
50
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
5.0
Vdc
Collector Current - Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
260
mW
Junction Temperature
T
J
150
C
Storage Temperature Range
T
stg
- 55 ~ + 150
C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
2
EMITTER
3
COLLECTOR
1
BASE
MARKING
DIAGRAM
XX M
XX = Specific Device Code
M = Date Code
Device Package
Shipping
ORDERING INFORMATION
L2SC5658M3T5G SOT-723 3000/Tape & Reel
Version 1.0
LESHAN RADIO COMPANY, LTD.
L2SC5658M3T5G-2/4
L2SC5658M3T5G
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= 50
m
Adc, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
Emitter-Base Breakdown Voltage (I
E
= 50
m
Adc, I
E
= 0)
V
(BR)EBO
5.0
-
-
Vdc
Collector-Base Cutoff Current (V
CB
= 30 Vdc, I
E
= 0)
I
CBO
-
-
0.5
m
A
Emitter-Base Cutoff Current (V
EB
= 4.0 Vdc, I
B
= 0)
I
EBO
-
-
0.5
m
A
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= 60 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
-
-
0.4
Vdc
DC Current Gain (Note 2)
(V
CE
= 6.0 Vdc, I
C
= 1.0 mAdc)
h
FE
120
-
560
-
Transition Frequency (V
CE
= 12 Vdc, I
C
= 2.0 mAdc, f = 30 MHz)
f
T
-
180
-
MHz
Output Capacitance (V
CB
= 12 Vdc, I
C
= 0 Adc, f = 1.0 MHz)
C
OB
-
2.0
-
pF
2. Pulse Test: Pulse Width
300
m
s, D.C.
2%.
Version 1.0
LESHAN RADIO COMPANY, LTD.
L2SC5658M3T5G-3/4
L2SC5658M3T5G
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. I
C
- V
CE
V
CE
, COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. On Voltage
I
C
, COLLECTOR CURRENT (mA)
I C
, COLLECT
OR CURRENT
(mA)
60
0
50
40
30
20
10
0
2
4
6
8
T
A
= 25C
160 mA
140 mA
120 mA
100 mA
80 mA
60 mA
40 mA
I
B
= 20 mA
DC CURRENT
GAIN
1000
0.1
100
10
1
10
100
T
A
= 25C
T
A
= -25C
T
A
= 75C
V
CE
= 10 V
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
2
0.01
1.5
1
0.5
0
0.1
1
10
100
T
A
= 25C
COLLECT
OR VOL
T
AGE (mV)
900
0.2
800
700
600
500
400
300
200
100
0.5
1
5
10
20
40
60
80 100 150 200
T
A
= 25C
V
CE
= 5 V
0
Figure 5. Capacitance
V
CB
(V)
Figure 6. Capacitance
V
EB
(V)
20
0
18
16
14
12
10
1
2
3
4
7
0
C ib
, INPUT
CAP
ACIT
ANCE (pF)
6
5
4
3
2
1
10
20
30
40
C ob
, CAP
ACIT
ANCE (pF)
Version 1.0
L2SC5658M3T5G-4/4
L2SC5658M3T5G
PACKAGE DIMENSIONS
D
b1
E
b
e
A
L
C
H
-Y-
-X-
X
0.08 (0.0032)
Y
2X
E
1
2
3
1.0
0.039
mm
inches
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
MIN
NOM
MAX
MILLIMETERS
A
0.45
0.50
0.55
b
0.15
0.20
0.27
b1
0.25
0.3
0.35
C
0.07
0.12
0.17
D
1.15
1.20
1.25
E
0.75
0.80
0.85
e
0.40 BSC
H
1.15
1.20
1.25
L
0.15
0.20
0.25
0.018
0.020
0.022
0.0059 0.0079 0.0106
0.010
0.012
0.014
0.0028 0.0047 0.0067
0.045
0.047
0.049
0.03
0.032
0.034
0.016 BSC
0.045
0.047
0.049
0.0059 0.0079 0.0098
MIN
NOM
MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
SOT-723
SOLDERING FOOTPRINT
Version 1.0
LESHAN RADIO COMPANY, LTD.
PDF 
ZIP