LESHAN RADIO COMPANY, LTD.
LBA277AT11/3
Band Switching Diode
2
ANODE
1
CATHODE
SOD523
1
2
LBA277AT1
Applications
High frequency switching
Features
1) Small surface mounting type.
2) High reliability.
Construction
Silicon epitaxial planar
Absolute maximum ratings (T
A
=25
C)
Parameter
Symbol
Limits
Unit
DC reverse voltage
V
R
35
V
DC forward current
I
F
100
mA
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55~+125
C
Electrical characteristics (T
A
=25
C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage V
F
1.0
V
I
F
=10mA
Capacitance between terminals
I
R
10
nA
V
R
=25V
Forward operating resistance
C
T
1.2
pF
V
R
=6V, f =1MHz
Reverse current
r
F
0.9
I
F
=2mA, f =100MHz
D
evice
Marking
LBA277AT1
=
1
LESHAN RADIO COMPANY, LTD.
LBA277AT1-2/3
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
1
100m
10m
1m
100
10
1
100n
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
0
10
20
30
40
50
0.1
1.0
10.0
REVERSE CURRENT : I
R
(
nA)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
0
0
1
2
3
10 20 30
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
f=100MHz
1
2
5
10
0.2
0.5
1.0
0
FORWARD OPERATING RESISTANCE :
r
F
(
)
FORWARD CURRENT : I
F
(mA)
Fig. 4 Forward operating
resistance characteristics
Electrical characteristic curves
(T
A
=25 C)
LBA277A T1
SOD523/SC79
s
T X Y
J
K
C
T
SEATING
PLANE
B
A
X
D 2 PL
.08(.003)
Y
M
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
1.10
1.30
0.043
0.051
B
0.70
0.90
0.028
0.035
C
0.50
0.70
0.020
0.028
D
0.25
0.35
0.010
0.014
J
0.07
0.20
0.0028
0.0079
K
0.15
0.25
0.006
0.010
S
1.50
1.70
0.059
0.067
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
LBA277AT 1
LBA277AT1 -3/3
LESHAN RADIO COMPANY, LTD.
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