LESHAN RADIO COMPANY, LTD.
1
3
2
LBSS138LT1
SOT 23 (TO236AB)
200 mAMPS
50 VOLTS
R
DS(on)
= 3.5
W
1
2
3
N - Channel
Device
Package
Shipping
ORDERING INFORMATION
LBSS138LT1 SOT23
3000 Tape & Reel
W
J1
J1 = Device Code
W = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
2
1
Drain
Gate
Source
Power MOSFET
200 mAmps, 50 Volts
NChannel SOT23
Typical applications are dcdc converters, power management in
portable and batterypowered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V) makes it ideal for low
voltage applications
Miniature SOT23 Surface Mount Package saves board space
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
50
Vdc
GatetoSource Voltage Continuous
V
GS
20
Vdc
Drain Current
Continuous @ TA = 25
C
Pulsed Drain Current (tp
10
s)
I
D
I
DM
200
800
mA
Total Power Dissipation @ TA = 25
C
P
D
225
mW
Operating and Storage Temperature
Range
T
J,
T
stg
55 to
150
C
Thermal Resistance JunctiontoAmbient
R
JA
556
C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T
L
260
C
Rating
MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
LBSS138LT1-1/5
Pb-Free Package May be Available. The G-Suffix Denotes a
Pb-Free Lead Finish
LBSS138LT1G SOT23
3000 Tape & Reel
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
Adc)
V
(BR)DSS
50
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
0.1
0.5
Adc
GateSource Leakage Current (V
GS
=
20 Vdc, V
DS
= 0 Vdc)
I
GSS
0.1
Adc
ON CHARACTERISTICS (Note 1.)
GateSource Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.5
1.5
Vdc
Static DraintoSource OnResistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= 40
C to +85
C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
r
DS(on)
5.6
10
3.5
Ohms
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
g
fs
100
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
40
50
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
12
25
Transfer Capacitance
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
3.5
5.0
SWITCHING CHARACTERISTICS (Note 2.)
TurnOn Delay Time
(V
t
d(on)
20
ns
TurnOff Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
t
d(off)
20
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperature.
LBSS138LT1-2/5
LESHAN RADIO COMPANY, LTD.
LBSS138LT1-3/5
LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
Figure 1. OnRegion Characteristics
1
TJ, JUNCTION TEMPERATURE (
C)
Figure 2. Transfer Characteristics
Figure 3. OnResistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55
-5
45
95
145
0.6
0.8
V GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
0
4
0
QT, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25
C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
V gs(th)
, V
ARIANCE (VOL
TS)
1
TJ, JUNCTION TEMPERATURE (
C)
ID = 1.0 mA
-55
-5
45
95
145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1
1.5
2
2.5
3
I D
, DRAIN CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150
C
25
C
-55
C
3.5
0.5
4
0
2
4
10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
, DRAIN CURRENT
(AMPS)
6
0.1
8
0.6
0.2
0.5
1
3
9
5
7
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25
C
0.7
0.8
0.9
4.5
0.5
0
2.2
-30
20
70
120
2500
3000
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
Figure 6. OnResistance versus Drain Current
0
0.1
0.2
2
5
6
Figure 7. OnResistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 8. OnResistance versus Drain Current
0.001
0.1
1
Figure 9. OnResistance versus Drain Current
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
I D
, DIODE CURRENT
(AMPS)
25
C
VGS = 2.5 V
TJ = 150
C
4
0
0.2
0.4
0.6
3
0.01
-55
C
25
C
0.8
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.1
0.2
1
7
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
5
3
0
120
40
0
80
5
10
Ciss
15
0.05
0.15
0.25
150
C
-55
C
6
8
4
2
0.05
0.15
0.25
20
1.0
1.2
150
C
25
C
-55
C
8
9
7
100
20
60
Figure 11. Capacitance
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.2
0.4
0.05
1
2.5
3
ID, DRAIN CURRENT (AMPS)
25
C
VGS = 4.5 V
2
1.5
R DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (OHMS)
0
0.2
0.4
0.05
1
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
3
2
0.1
0.3
0.5
150
C
-55
C
3.5
4.5
2.5
1.5
0.1
0.3
0.5
150
C
25
C
-55
C
4
4.5
3.5
10
1
0.25
0.45
0.15
0.35
5
5.5
6
0.25
0.45
0.15
0.35
25
Coss
Crss
LBSS138LT1-4/5
LESHAN RADIO COMPANY, LTD.
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.03
1
0.
8
SOT-23
3
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
LBSS138LT1-5/5
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