This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching
applications. This
device is
housed in the SC89 package which is designed for low
power surface mount applications, where board space is at a
premium.
Fast trr
Low CD
Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25
C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
80
Vdc
Peak Reverse Voltage
VRM
80
Vdc
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current
IFSM(1)
2.0
Adc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
mW
Junction Temperature
TJ
150
C
Storage Temperature Range
Tstg
55 to +150
C
1. t = 1
S
ELECTRICAL CHARACTERISTICS
(TA = 25
C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
IR
VR = 70 V
--
0.1
Adc
Forward Voltage
VF
IF = 100 mA
--
1.2
Vdc
Reverse Breakdown Voltage
VR
IR = 100
A
80
--
Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
--
3.5
pF
Reverse Recovery Time
trr(2)
IF = 5.0 mA, VR = 6.0 V, RL = 100
, Irr = 0.1 IR
--
4.0
ns
2. trr Test Circuit on following page.
LDAN222T1=N9
Driver Marking
LDAN222T1-1/3
1
2
3
SC-89
LDAN222T1
3
CATHODE
1
ANODE
2
ANODE
Common Cathode Silicon
Dual Switching Diode
Electrical characteristic curves
Figure 1. Forward Voltage
Figure 2. Reverse Current
Figure 3. Diode Capacitance
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
LDAN222T1
LDAN222T1-2/3
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
LDAN222T1
SC-89
LDAN222T1-3/3
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